ktc9014s Korea Electronics (KEC GROUP), ktc9014s Datasheet

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ktc9014s

Manufacturer Part Number

ktc9014s

Description

Epitaxial Planar Npn Transistor

Manufacturer

Korea Electronics (KEC GROUP)

Datasheet

1.KTC9014S.pdf (2 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Bonase Electronics (HK) Co., Limited

Part Number:

ktc9014s-C

Manufacturer:

KEC

Quantity:

3 000

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Meier Automation Equipment Co., Limited

Part Number:

ktc9014s-C

Manufacturer:

KEC

Quantity:

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Company:

Meier Automation Equipment Co., Limited

Meier Automation Equipment Co., Limited

Part Number:

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KEC

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Meier Automation Equipment Co., Limited

Part Number:

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Manufacturer:

KEC

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Meier Automation Equipment Co., Limited

Meier Automation Equipment Co., Limited

Part Number:

ktc9014s-C-RTK/P

Manufacturer:

KEC

Quantity:

20 000

Company:

Amily Shenzhen XNWY Technology Co., Ltd

Amily Shenzhen XNWY Technology Co., Ltd

Part Number:

ktc9014s-C-RTK/P

0

Company:

H&T Electronics

H&T Electronics

Part Number:

ktc9014s-C-RTK/P

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30 000

Company:

H&T Electronics

H&T Electronics

Part Number:

ktc9014s-C-RTK/P

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Company:

Meier Automation Equipment Co., Limited

Meier Automation Equipment Co., Limited

Part Number:

ktc9014s-C/

Manufacturer:

KEC

Quantity:

20 000

Current page: 1 of 2
Download datasheet (397Kb)

2003. 3. 25

GENERAL PURPOSE APPLICATION.

SWITCHING APPLICATION.

FEATURES

MAXIMUM RATING (Ta=25 )

* P

ELECTRICAL CHARACTERISTICS (Ta=25 )

Note : h

CHARACTERISTIC

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Emitter Current

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

Collector-Emitter Saturation Voltage

Transition Frequency

Collector Output Capacitance

Noise Figure

Excellent h

Low Noise :NF=1dB(Typ.) at f=1kHz.

Complementary to KTC9015S.

C

: h

: Package Mounted On 99.5% Alumina (10 8 0.6 )

FE

FE

(I

C

CHARACTERISTIC

Classification B:100 300, C:200 600, D:400 1000

=0.1mA)/h

FE

Linearity

FE

(I

C

=2mA)=0.95(Typ.).

Revision No : 1

SEMICONDUCTOR

TECHNICAL DATA

SYMBOL

V

SYMBOL

h

V

V

P

T

FE

V

CBO

I

I

T

CEO

EBO

C

stg

C

E

I

I

j

CE(sat)

C

*

NF

CBO

(Note)

EBO

f

T

ob

RATING

-55 150

-150

V

V

V

I

V

V

V

150

350

150

C

60

50

5

CB

EB

CE

CE

CB

CE

=100mA, I

=5V, I

=5V, I

=10V, I

=6V, I

=50V, I

=10V, I

TEST CONDITION

C

C

C

UNIT

mW

=0

=1mA

=0.1mA, Rg=10k , f=1kHz

E

C

E

mA

mA

V

V

V

=0

B

=1mA, f=100MHz

=0, f=1MHz

=10mA

EPITAXIAL PLANAR NPN TRANSISTOR

Type Name

Marking

h

L

FE

1

2

MIN.

1. EMITTER

2. BASE

3. COLLECTOR

P

100

60

KTC9014S

-

-

-

-

-

Rank

E

B

M

BD

SOT-23

P

3

L

TYP.

0.1

2.0

1.0

-

-

-

-

DIM

A

D

G

H

K

M

N

B

C

E

L

P

MAX.

J

1000

0.25

100

3.5

50

10

-

MILLIMETERS

1.30+0.20/-0.15

0.45+0.15/-0.05

2.40+0.30/-0.20

0.13+0.10/-0.05

1.00+0.20/-0.10

Lot No.

0.00 ~ 0.10

2.93 0.20

1.30 MAX

0.20 MIN

1.90

0.95

0.55

+ _

7

UNIT

MHz

nA

nA

dB

pF

V

1/2

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