ktc3876s Korea Electronics (KEC GROUP), ktc3876s Datasheet
ktc3876s
Manufacturer Part Number
ktc3876s
Description
Epitaxial Planar Npn Transistor
Manufacturer
Korea Electronics (KEC GROUP)
Datasheet
1.KTC3876S.pdf
(2 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ktc3876s-Y-RTK/P
Manufacturer:
KEC
Quantity:
20 000
Company:
Part Number:
ktc3876sY-RTK
Manufacturer:
CJ
Quantity:
24 462
2007. 5. 29
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
(Note) : h
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain (Note)
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
Excellent h
Complementary to KTA1505S.
: h
CHARACTERISTIC
h
FE
FE
FE
(2)=25(Min.) at V
(2) Classification
CHARACTERISTIC
(1) Classification
FE
Linearity
CE
Revision No : 3
=6V, I
SEMICONDUCTOR
O:70 140 Y:120 240
O:25Min.
C
SYMBOL
=400mA.
TECHNICAL DATA
V
V
V
T
P
I
I
T
CBO
CEO
EBO
stg
C
B
C
j
Y:40Min.
SYMBOL
V
h
h
I
I
V
FE
FE
CE(sat)
C
CBO
EBO
f
BE
T
ob
(1)
(2)
RATING
-55 150
500
150
150
35
30
50
5
GR:200 400
V
V
V
V
I
V
V
V
C
CB
EB
CE
CE
CE
CE
CB
=100mA, I
=5V, I
=1V, I
=6V, I
=1V, I
=6V, I
=35V, I
=6V, I
UNIT
mW
mA
mA
V
V
V
TEST CONDITION
C
C
C
C
C
E
=0
=100mA
=400mA
=100mA
=20mA
=0, f=1MHz
E
=0
B
=10mA
EPITAXIAL PLANAR NPN TRANSISTOR
Type Name
Marking
L
h
1
2
1. EMITTER
2. BASE
3. COLLECTOR
FE
MIN.
P
70
25
KTC3876S
-
-
-
-
-
-
Rank
E
B
SOT-23
M
W
P
3
L
TYP.
300
0.1
0.8
7.0
-
-
-
-
DIM
A
B
C
D
E
G
H
J
K
L
N
M
P
MAX.
0.25
400
0.1
0.1
1.0
-
-
-
MILLIMETERS
1.30+0.20/-0.15
0.45+0.15/-0.05
2.40+0.30/-0.20
0.13+0.10/-0.05
1.00+0.20/-0.10
0.00 ~ 0.10
Lot No.
2.93 0.20
1.30 MAX
0.20 MIN
1.90
0.95
0.55
7
+ _
UNIT
MHz
pF
V
V
A
A
1/2
Related parts for ktc3876s
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Bridge Diode
Manufacturer:
Korea Electronics (KEC GROUP)
Datasheet:
Part Number:
Description:
Schottky Barrier Type Diode Switching Type Power Supply Applications
Manufacturer:
Korea Electronics (KEC GROUP)
Datasheet:
Part Number:
Description:
Schottky Barrier Type Diode Switching Type Power Supply
Manufacturer:
Korea Electronics (KEC GROUP)
Datasheet:
Part Number:
Description:
Schottky Barrier Type Diode Switching Type Power Supply
Manufacturer:
Korea Electronics (KEC GROUP)
Datasheet:
Part Number:
Description:
High Voltage Transistor
Manufacturer:
Korea Electronics (KEC GROUP)
Datasheet:
Part Number:
Description:
Epitaxial Planar Pnp Transistor
Manufacturer:
Korea Electronics (KEC GROUP)
Datasheet:
Part Number:
Description:
Epitaxial Planar Pnp Transistor General Purpose, Switching
Manufacturer:
Korea Electronics (KEC GROUP)
Datasheet:
Part Number:
Description:
Epitaxial Planar Npn Transistor General Purpose, Switching
Manufacturer:
Korea Electronics (KEC GROUP)
Datasheet:
Part Number:
Description:
Tvs Diode For Esd Protection
Manufacturer:
Korea Electronics (KEC GROUP)
Datasheet:
Part Number:
Description:
Schottky Barrier Diode Sbds
Manufacturer:
Korea Electronics (KEC GROUP)
Datasheet:
Part Number:
Description:
Schottky Barrier Diode Sbds
Manufacturer:
Korea Electronics (KEC GROUP)
Datasheet:
Part Number:
Description:
Zener Diode Silicon Epitaxial Planar Diode
Manufacturer:
Korea Electronics (KEC GROUP)
Datasheet:
Part Number:
Description:
Bipolar Linear Integrated Circuit 4.6w Dual Audio Power Amplifier
Manufacturer:
Korea Electronics (KEC GROUP)
Datasheet:
Part Number:
Description:
Bipolar Linear Integrated Circuit 4.6w Dual Audio Power Amplifier
Manufacturer:
Korea Electronics (KEC GROUP)
Datasheet:
Part Number:
Description:
Bipolar Linear Integrated Circuit Audio Power Amplifier
Manufacturer:
Korea Electronics (KEC GROUP)
Datasheet:
ktc3876s Summary of contents
Page 1
... =100mA, I =10mA CE(sat =1V, I =100mA =6V, I =20mA =6V, I =0, f=1MHz GR:200 400 Y:40Min. KTC3876S EPITAXIAL PLANAR NPN TRANSISTOR DIM MILLIMETERS 2.93 0.20 A 1.30+0.20/-0. 1.30 MAX 0.45+0.15/-0.05 E 2.40+0.30/-0. 0.13+0.10/-0.05 K 0. 0.20 MIN 1.00+0.20/-0.10 N ...
Page 2
... B 0.5 0.3 0.1 Ta =100 C 0.05 0.03 0 COLLECTOR CURRENT 500 1 400 2 1 300 200 2 100 AMBIENT TEMPERATURE 2007 Revision KTC3876S CE COMMON EMITTER Ta=25 C 3.0 2.0 1.0 0.5 I =0.1mA ( = =- 100 300 1K (mA) C MOUNTED ON 99.5% ALUMINA 10x8x0.6mm Ta=25 C 100 ...