ATP213_12 SANYO [Sanyo Semicon Device], ATP213_12 Datasheet - Page 2

• Manufacturer Part Number: ATP213_12
• Description: General-Purpose Switching Device Applications
• Manufacturer: SANYO [Sanyo Semicon Device]

Electrical Characteristics at Ta=25°C
Switching Time Test Circuit
Ordering Information
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
ATP213-TL-H
P.G
10V
0V
PW=10μs
D.C.≤1%
V IN
Device
Parameter
V IN
50Ω
G
V DD =30V
D
S
I D =25A
R L =1.2Ω
ATP213
V (BR)DSS
I DSS
I GSS
V GS (off)
| yfs |
R DS (on)1
R DS (on)2
R DS (on)3
Ciss
Coss
Crss
t d (on)
t r
t d (off)
t f
Qg
Qgs
Qgd
V SD
Symbol
V OUT
Package
ATPAK
I D =1mA, V GS =0V
V DS =60V, V GS =0V
V GS =±16V, V DS =0V
V DS =10V, I D =1mA
V DS =10V, I D =25A
I D =25A, V GS =10V
I D =13A, V GS =4.5V
I D =7A, V GS =4V
V DS =20V, f=1MHz
See specifi ed Test Circuit.
V DS =30V, V GS =10V, I D =50A
I S =50A, V GS =0V
ATP213
Conditions
3,000pcs./reel
Shipping
min
Pb Free and Halogen Free
1.2
60
Ratings
typ
memo
3150
10.5
12.5
1.01
310
190
170
230
150
55
12
15
17
23
58
max
±10
2.6
1.2
16
21
26
No. A1526-2/7
1
Unit
mΩ
mΩ
mΩ
μA
μA
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
S
V
V
V