IPB70N04S4-06 INFINEON [Infineon Technologies AG], IPB70N04S4-06 Datasheet

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IPB70N04S4-06

Manufacturer Part Number
IPB70N04S4-06
Description
OptiMOS-T2 Power-Transistor
Manufacturer
INFINEON [Infineon Technologies AG]
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IPB70N04S4-06
Manufacturer:
INFINEON
Quantity:
12 500
Rev. 1.0
OptiMOS
Features
• N-channel - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Avalanche current, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Type
IPB70N04S4-06
IPI70N04S4-06
IPP70N04S4-06
®
-T2 Power-Transistor
1)
Package
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
j
=25 °C, unless otherwise specified
1)
Symbol
I
I
E
I
V
P
T
-
D
D,pulse
AS
j
AS
GS
tot
, T
Marking
4N0406
4N0406
4N0406
stg
T
T
T
I
-
-
T
-
-
D
C
C
C
C
=35A
page 1
=25°C, V
=100°C, V
=25°C
=25°C
PG-TO263-3-2
Conditions
GS
GS
Product Summary
V
R
I
=10V
D
DS
DS(on),max
=10V
2)
IPI70N04S4-06, IPP70N04S4-06
PG-TO262-3-1
(SMD version)
-55 ... +175
55/175/56
Value
280
±20
70
51
72
70
58
IPB70N04S4-06
PG-TO220-3-1
6.2
40
70
2010-04-13
Unit
A
mJ
A
V
W
°C
V
m
A

Related parts for IPB70N04S4-06

IPB70N04S4-06 Summary of contents

Page 1

... =25°C D,pulse =35A =25°C tot stg - - page 1 IPB70N04S4-06 IPI70N04S4-06, IPP70N04S4-06 DS (SMD version) DS(on),max D PG-TO262-3-1 PG-TO220-3-1 Value =10V =10V 280 72 70 ±20 58 -55 ... +175 55/175/ 6 Unit ° ...

Page 2

... GS(th =40V, V =0V DSS =18V, V =0V =85° =20V, V =0V GSS =10V, I =70A DS(on =10V, I =70A SMD version page 2 IPB70N04S4-06 IPI70N04S4-06, IPP70N04S4-06 Values min. typ. max 2 2.0 3.0 4.0 - 0.015 100 - 5.6 6.5 - 5.3 6.2 2010-04-13 Unit ...

Page 3

... C I S,pulse V =0V, I =70A =25° =20V, I =50A /dt =100A/µ (one layer, 70 µm thick) copper area for drain page 3 IPB70N04S4-06 IPI70N04S4-06, IPP70N04S4-06 Values min. typ. max. - 1960 2550 - 490 640 - =10V 11.7 15.2 - 3.5 8 ...

Page 4

... 150 200 4 Max. transient thermal impedance Z = f(t thJC parameter µs 10 µ 100 µ 100 [V] page 4 IPB70N04S4-06 IPI70N04S4-06, IPP70N04S4- ≥ SMD 100 150 T [° 0.5 0.1 0.05 0.01 single pulse - ...

Page 5

... 6 5 [V] 8 Typ. drain-source on-state resistance R = f(T DS(on) 9.5 8.5 7.5 6.5 5.5 4.5 25 °C -55 °C 3 [V] page 5 IPB70N04S4-06 IPI70N04S4-06, IPP70N04S4- °C; SMD 5 [ SMD -60 - 100 T [° ...

Page 6

... Avalanche characteristics parameter: T 100 10 25 °C 25 °C 1 0.1 0.8 0 1.2 1.2 1.4 1.4 0.1 [V] [V] page 6 IPB70N04S4-06 IPI70N04S4-06, IPP70N04S4- MHz [ j(start) 100 °C 150 ° 100 t [µs] AV Ciss Coss Crss °C 1000 ...

Page 7

... Q gate Rev. 1.0 14 Drain-source breakdown voltage V BR(DSS 125 175 16 Gate charge waveforms s(th (th [nC] page 7 IPB70N04S4-06 IPI70N04S4-06, IPP70N04S4- -55 - 105 T [° 145 Q gate 2010-04-13 ...

Page 8

... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 IPI70N04S4-06, IPP70N04S4-06 page 8 IPB70N04S4-06 2010-04-13 ...

Page 9

... Revision History Version Revision 1.0 Rev. 1.0 Date 13.04.2010 page 9 IPB70N04S4-06 IPI70N04S4-06, IPP70N04S4-06 Changes Final Data Sheet 2010-04-13 ...

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