ao4612l Alpha & Omega Semiconductor, ao4612l Datasheet

no-image

ao4612l

Manufacturer Part Number
ao4612l
Description
Complementary Enhancement Mode Field Effect Transistor
Manufacturer
Alpha & Omega Semiconductor
Datasheet
Alpha & Omega Semiconductor, Ltd.
Absolute Maximum Ratings T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Power Dissipation
Junction and Storage Temperature Range
Thermal Characteristics: n-channel and p-channel
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
AO4612
Complementary Enhancement Mode Field Effect Transistor
General Description
The AO4612 uses advanced trench
technology MOSFETs to provide excellent
R
complementary MOSFETs may be used
in H-bridge, Inverters and other
applications. Standard product AO4612 is
Pb-free (meets ROHS & Sony 259
specifications). AO4612L is a Green
Product ordering option. AO4612 and
AO4612L are electrically identical.
DS(ON)
S2
G2
S1
G1
A
and low gate charge. The
SOIC-8
1
2
3
4
8
7
6
5
D2
D2
D1
D1
B
T
T
T
T
A
A
A
A
=25°C
=70°C
=25°C
=70°C
C
C
A
A
A
A
A
=25°C unless otherwise noted
Steady-State
Steady-State
Steady-State
Steady-State
t ≤ 10s
t ≤ 10s
Symbol
V
V
I
I
P
T
D
DM
J
DS
GS
D
Features
n-channel
V
I
R
< 56mΩ (V
< 77mΩ (V
, T
D
DS
DS(ON)
= 4.5A (V
STG
(V) = 60V
n-channel
G2
Symbol
GS
GS
GS
Max n-channel
R
R
R
R
=10V)
=4.5V)
=10V)
θJA
θJL
θJA
θJL
-55 to 150
D2
S2
1.28
±20
4.5
3.6
60
20
2
R
Device
n-ch
n-ch
n-ch
p-ch
p-ch
p-ch
-60V
DS(ON)
p-channel
-3.2A (V
< 105mΩ (V
< 135mΩ (V
p-channel
G1
Max p-channel
GS
= -10V)
Typ
D1
S1
-55 to 150
48
74
35
48
74
35
GS
GS
1.28
±20
-3.2
-2.6
-60
-20
= -10V)
= -4.5V)
2
Max Units
62.5
62.5
110
110
60
40
Units
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C
W
V
V
A

Related parts for ao4612l

ao4612l Summary of contents

Page 1

... MOSFETs to provide excellent R and low gate charge. The DS(ON) complementary MOSFETs may be used in H-bridge, Inverters and other applications. Standard product AO4612 is Pb-free (meets ROHS & Sony 259 specifications). AO4612L is a Green Product ordering option. AO4612 and AO4612L are electrically identical ...

Page 2

AO4612 N Channel Electrical Characteristics (T Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static ...

Page 3

AO4612 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL 20 10V 5. (Volts) DS Fig 1: On-Region Characteristics 100 =4. ...

Page 4

AO4612 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL 10 V =30V 4. (nC) g Figure 7: Gate-Charge Characteristics 100.0 R DS(ON) limited 10.0 10ms 1s 1.0 10s T =150°C J(Max) ...

Page 5

AO4612 P-Channel Electrical Characteristics (T Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source ...

Page 6

AO4612 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 20 -10V -4. -3. (Volts) DS Fig 1: On-Region Characteristics 130 120 V =-4.5V GS 110 100 (A) ...

Page 7

AO4612 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 10 V =-30V =-3. (nC) g Figure 7: Gate-Charge Characteristics 100.0 T =150°C, T =25°C J(Max DS(ON) 10.0 limited ...

Related keywords