MRF6S9125 FREESCALE [Freescale Semiconductor, Inc], MRF6S9125 Datasheet - Page 8

• Manufacturer Part Number: MRF6S9125
• Description: RF Power Field Effect Transistors
• Manufacturer: FREESCALE [Freescale Semiconductor, Inc]

MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1
8
22
21
20
19
18
17
16
15
1
Figure 11. Power Gain and Drain Efficiency
25_C
P
versus CW Output Power
out
, OUTPUT POWER (WATTS) CW
T
C
= −30_C
25_C
85_C
85_C
10
Figure 13. MTTF Factor versus Junction Temperature
10
10
10
η
9
8
7
90
D
This above graph displays calculated MTTF in hours x ampere
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by I
V
I
f = 880 MHz
DQ
DD
100
= 950 mA
= 28 Vdc
TYPICAL CHARACTERISTICS
110
100
−30_C
120
T
G
J
, JUNCTION TEMPERATURE (°C)
ps
D
2
for MTTF in a particular application.
130
200
70
60
50
40
30
20
10
0
140
150
160
16
21
20
19
18
17
0
170
Figure 12. Power Gain versus Output Power
V
180
DD
= 12 V
190
50
P
out
200
16 V
2
, OUTPUT POWER (WATTS) CW
210
100
20 V
Freescale Semiconductor
24 V
150
28 V
RF Device Data
I
f = 880 MHz
DQ
200
= 950 mA
32 V
250