m6mgb331s4bkt Renesas Electronics Corporation., m6mgb331s4bkt Datasheet - Page 2

• Manufacturer Part Number: m6mgb331s4bkt
• Description: 33,554,432-bit 2,097,152 - Word By 16-bit/4,194,304-word By 8-bit Cmos 3.3v-only Flash Memory & 4,194,304-bit 262,144-word By 16-bit/524,288-word B
• Manufacturer: Renesas Electronics Corporation.

Preliminary
Notice: This is not a final specification.
Some parametric limits are subject to change.
2
Capacitance
Symbol
COUT
MCP Block Diagram
Note 1): In case of x8 organization, A-1 is added, and only Lower Byte data(DQ0 to DQ7) are assigned to I/O and
Note 2): In the flash memory part there are VCCs which mean F-VCC.
Note 3): DU(Dont Use) pin must be OPEN ,otherwise be inputted within 0V ~ Vcc.
CIN
A0 to A20
F-CE#
F-WP#
F-RP#
BYTE#
WE#
OE#
S-UB#
S-LB#
S-CE1#
S-CE2
Capacitance
capacitance
1)
In the SRAM part there are UB# and
Upper Byte data(DQ8 to DQ15) are High-Z.
Output
Input
A20-A0, OE#, WE#, F-CE#, F-WP#, F-RP#,
S-CE1#, S-CE2, BYTE#, S-LB#, S-UB#
A0 to A20
A0 to A17
1)
1)
Parameter
DQ15-DQ0
4,194,304-BIT (262,144-WORD BY 16-BIT/524,288-WORD BY 8-BIT) CMOS SRAM
33,554,432-BIT (2,097,152 - WORD BY 16-BIT/4,194,304-WORD BY 8-BIT) CMOS
F-Vcc
S-Vcc
Flash Memory
LB# which mean S-UB# and S-UB#, respectively.
32Mbit DINOR
SRAM
4Mbit
GND
Vin=Vout=0V
Conditions
Ta=25C,
f=1MHz,
M6MGB/T331S4BKT
Stacked -  MCP (micro Multi Chip Package)
3.3V-ONLY FLASH MEMORY &
DQ0 to DQ15
Min.
1)
Limits
Typ.
Renesas LSIs
Rev.0.1_48a_beez
Max.
18
22
Unit
pF
pF