2SJ181S HITACHI [Hitachi Semiconductor], 2SJ181S Datasheet - Page 5

• Manufacturer Part Number: 2SJ181S
• Description: Silicon P-Channel MOS FET
• Manufacturer: HITACHI [Hitachi Semiconductor]

0.05
0.02
0.5
0.2
0.1
–0.05 –0.1 –0.2
2
1
Forward Transfer Admittance vs.
25 °C
Tc = –25 °C
Drain Current I
Drain Current
75 °C
–0.5
1000
300
100
V
Pulse Test
–1
30
10
D
DS
3
1
0
(A)
= –20 V
–2
Drain to Source Voltage V
–10
Typical Capacitance vs.
Drain to Source Voltage
–5
–20
Coss
Ciss
Crss
1000
–30
500
200
100
50
20
10
–0.05 –0.1 –0.2
V
f = 1 MHz
Reverse Drain Current
-40
GS
DS
Body–Drain Diode Reverse
= 0
(V)
–50
Recovery Time
2SJ181(L), 2SJ181(S)
di / dt = 100 A / µs
V
–0.5
GS
= 0, Ta = 25 °C
–1
I
DR
–2
(A)
–5
5