SI1304DL-T1 VISHAY [Vishay Siliconix], SI1304DL-T1 Datasheet - Page 3

• Manufacturer Part Number: SI1304DL-T1
• Description: N-Channel 25-V (D-S) MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

Document Number: 71315
S-41774—Rev. C, 04-Oct-04
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.001
0.01
1.0
0.8
0.6
0.4
0.2
0.0
0.1
10
8
6
4
2
0
1
0.0
0.0
0.0
V
I
D
DS
Source-Drain Diode Forward Voltage
= 0.75 A
0.5
0.2
On-Resistance vs. Drain Current
= 15 V
0.5
T
V
J
SD
V
Q
= 150_C
GS
g
− Source-to-Drain Voltage (V)
I
1.0
0.4
− Total Gate Charge (nC)
= 2.5 V
D
− Drain Current (A)
Gate Charge
1.0
1.5
0.6
1.5
T
J
2.0
0.8
= 25_C
V
GS
2.0
= 4.5 V
2.5
1.0
2.5
3.0
1.2
200
150
100
0.8
0.6
0.4
0.2
0.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
50
0
−50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
−25
D
GS
= 0.75 A
C
= 4.5 V
5
rss
T
V
V
2
0
J
GS
DS
− Junction Temperature (_C)
− Gate-to-Source Voltage (V)
− Drain-to-Source Voltage (V)
25
Capacitance
C
10
oss
I
D
Vishay Siliconix
50
= 0.75 A
4
C
iss
15
75
Si1304DL
100
6
www.vishay.com
20
125
150
25
8
3