S1227 HAMAMATSU [Hamamatsu Corporation], S1227 Datasheet
S1227
Available stocks
Related parts for S1227
S1227 Summary of contents
Page 1
... S1227-16BR 0.43 190 to 1000 S1227-33BQ 0.36 0.10 0.12 0.34 320 to 1000 S1227-33BR 0.43 720 190 to 1000 S1227-66BQ 0.36 0.10 0.12 0.34 320 to 1000 S1227-66BR 0.43 S1227-1010BQ 190 to 1000 0.36 0.10 0.12 0.34 S1227-1010BR 320 to 1000 0.43 * Window material Q: quartz glass, R: resin coating Applications l Analytical equipment l Optical measurement equipment, etc. Active Effective area size active area 2 (mm) (mm ) 1.1 × 5.9 5.9 2.4 × ...
Page 2
... AMBIENT TEMPERATURE (˚C) 2 (Typ. Ta=25 ˚C) 800 1000 KSPDB0094EA KSPDB0095EA (Typ mV) R S1227-16BQ/ KSPDB0097EA S1227 series Si photodiode Photo sensitivity temperature characteristic +1.5 +1.0 +0.5 0 -0.5 190 400 600 800 1000 WAVELENGTH (nm) Dark current vs. reverse voltage (Typ ˚ 100 pA S1227-1010BQ/BR S1227-66BQ/BR ...
Page 3
... ACTIVE AREA PHOTOSENSITIVE SURFACE 0.5 LEAD 6.6 ± 0.3 4.5 ± 0.2 ANODE TERMINAL MARK KSPDA0096EA S1227 series ANODE MARK Resin coating may extend a maximum of 0.1 mm above the upper surface of the package. KSPDA0095EA Resin coating may extend a maximum of 0.1 mm above the upper surface of the package. KSPDA0097EA ...
Page 4
... ANODE TERMINAL MARK KSPDA0100EA Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2004 Hamamatsu Photonics K.K. S1227 series Si photodiode 10.1 ± 0.1 0.5 LEAD 9.2 ± 0.3 7.4 ± ...