AD645 AD [Analog Devices], AD645 Datasheet

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AD645

Manufacturer Part Number
AD645
Description
Low Noise, Low Drift FET Op Amp
Manufacturer
AD [Analog Devices]
Datasheet

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a
PRODUCT DESCRIPTION
The AD645 is a low noise, precision FET input op amp. It of-
fers the pico amp level input currents of a FET input device
coupled with offset drift and input voltage noise comparable to a
high performance bipolar input amplifier.
The AD645 has been improved to offer the lowest offset drift in
a FET op amp, 1 V/ C. Offset voltage drift is measured and
trimmed at wafer level for the lowest cost possible. An inher-
ently low noise architecture and advanced manufacturing tech-
niques result in a device with a guaranteed low input voltage
noise of 2 V p-p, 0.1 Hz to 10 Hz. This level of dc performance
along with low input currents make the AD645 an excellent
choice for high impedance applications where stability is of
prime concern.
REV. B
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.
FEATURES
Improved Replacement for Burr-Brown
OPA-111 and OPA-121 Op Amp
LOW NOISE
2 V p-p max, 0.1 Hz to 10 Hz
10 nV/ Hz max at 10 kHz
11 fA p-p Current Noise 0.1 Hz to 10 Hz
HIGH DC ACCURACY
250 V max Offset Voltage
1 V/ C max Drift
1.5 pA max Input Bias Current
114 dB Open-Loop Gain
Available in Plastic Mini-DIP, 8-Pin Header Packages, or
APPLICATIONS
Low Noise Photodiode Preamps
CT Scanners
Precision I-V Converters
Figure 1. AD645 Voltage Noise Spectral Density vs.
Frequency
Chip Form
100
1.0
1k
10
1
10
FREQUENCY – Hz
100
1k
10k
The AD645 is available in six performance grades. The AD645J
and AD645K are rated over the commercial temperature range
of 0 C to +70 C. The AD645A, AD645B, and the ultra-
precision AD645C are rated over the industrial temperature
range of –40 C to +85 C. The AD645S is rated over the military
PRODUCT HIGHLIGHTS
1. Guaranteed and tested low frequency noise of 2 V p-p max
3. Low input bias current and current noise (11 fA p-p 0.1 Hz to
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 617/329-4700
temperature range of –55 C to +125 C and is available
processed to MIL-STD-883B.
The AD645 is available in an 8-pin plastic mini-DIP, 8-pin
header, or in die form.
2. Low V
and 20 nV/ Hz at 100 Hz makes the AD645C ideal for low
noise applications where a FET input op amp is needed.
lent choice for applications requiring ultimate stability.
10 Hz) allow the AD645 to be used as a high precision
preamp for current output sensors such as photodiodes, or as
a buffer for high source impedance voltage output sensors.
Figure 2. Typical Distribution of Average Input Offset
Voltage Drift (196 Units)
OFFSET
8-Pin Plastic Mini-DIP
NULL
–V S
–IN
+IN
OS
(N) Package
NC = NO CONNECT
1
2
3
4
drift of 1 V/ C max makes the AD645C an excel-
30
25
20
15
10
5
0
TOP VIEW
AD645
–2.5
CONNECTION DIAGRAMS
–2.0
INPUT OFFSET VOLTAGE DRIFT– V/ C
–1.5
7
6
Low Noise, Low Drift
8
5
–1.0
NC
+V S
OUTPUT
OFFSET
NULL
–0.5
0.0
OFFSET
NULL
IN
0.5
+
NOTE: CASE IS CONNECTED
TO PIN 8
IN
2
TO-99 (H) Package
1.0
FET Op Amp
1
3
1.5
AD645
CASE
AD645
4
8
V
2.0
Fax: 617/326-8703
2.5
7
5
6
+V
OFFSET
NULL
OUTPUT

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AD645 Summary of contents

Page 1

... AD645K are rated over the commercial temperature range +70 C. The AD645A, AD645B, and the ultra- precision AD645C are rated over the industrial temperature range of – +85 C. The AD645S is rated over the military temperature range of – +125 C and is available processed to MIL-STD-883B. ...

Page 2

... +25 C. For higher temperature, the current doubles every from ground. –2– AD645C AD645S Typ Max Min Typ Max Units 50 250 100 500 V 75 300 500 1500 V 0 110 90 ...

Page 3

... Storage Temperature Range ( – +150 C Storage Temperature Range ( – +125 C Operating Temperature Range AD645J +70 C CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. ...

Page 4

... 0.1 1.0 10 100 1k 100k FREQUENCY – Hz Figure 9. Voltage Noise Spectral Density vs. Frequency for Various Source Resistances 1k 100 10 100 1 NOISE OF AD645 AND RESISTOR 10 0.1 SOURCE RESISTANCE RESISTOR NOISE ONLY 0.01 1.0 100 1k 10k 100k 1M SOURCE RESISTANCE – Figure 12. Voltage Noise Spectral Density @ 1 kHz vs. Source Resistance – ...

Page 5

... 140 130 120 110 100 – 60 – 40 – 100 120 140 TEMPERATURE – C Figure 23. Open-Loop Gain vs. Temperature –5– AD645 120 100 100 1k 10k 100k 1M 10M FREQUENCY – Hz Figure 18. Common-Mode Rejection vs. Frequency 3.0 4.0 2.0 3.0 SLEW RATE GAIN-BANDWIDTH 1 ...

Page 6

... AD645 AD645–Typical Characteristics 0.1% 0.01 ERROR – 2 0.1% 0.01% – 4 – 6 – 8 – 10 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 SETTLING TIME – µs Figure 25. Output Swing and Error vs. Settling Time 0.1µ OUT AD645 0.1µ 10pF – Figure 28a. Unity-Gain Follower 5k 0.1µF ...

Page 7

... PHOTODIODE Figure 30. The AD645 Used as a Sensitive Preamplifier Preamplifier Applications The low input current and offset voltage levels of the AD645 to- gether with its low voltage noise make this amplifier an excellent choice for preamplifiers used in sensitive photodiode applica- tions typical preamp circuit, shown in Figure 30, the out- ...

Page 8

... Second, stray capacitance at the input terminal is 1.1k minimized which in turn increases signal bandwidth. In the header or can package, the case of the AD645 is connected to V OUT Pin 8 so that it may be tied to the input potential (when operat- ing as a follower) or tied to ground (when operating as an in- verter). The AD645’ ...

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