SST12LP07-QVCE SST [Silicon Storage Technology, Inc], SST12LP07-QVCE Datasheet

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SST12LP07-QVCE

Manufacturer Part Number
SST12LP07-QVCE
Description
2.4 GHz High-Power, High-Gain Power Amplifier
Manufacturer
SST [Silicon Storage Technology, Inc]
Datasheet

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Price
Part Number:
SST12LP07-QVCE
Manufacturer:
YEONHO
Quantity:
569
Part Number:
SST12LP07-QVCE
Manufacturer:
SST
Quantity:
20 000
FEATURES:
• High linear output power:
• High power-added efficiency/Low operating
• Single-pin low I
• Low idle current
• High-speed power-up/down
PRODUCT DESCRIPTION
The SST12LP07 is a versatile power amplifier based on
the highly-reliable InGaP/GaAs HBT technology.
The SST12LP07 can be easily configured for high-power
applications with good power-added efficiency while oper-
ating over the 2.4- 2.5 GHz frequency band. This device
typically provides 29 dB gain with 22% power-added effi-
ciency @ P
added efficiency @ P
The SST12LP07 has excellent linearity, typically ~2.5%
added EVM at 19 dBm output power which is essential for
54 Mbps 802.11g/n operation while meeting 802.11g spec-
trum mask at 22 dBm. The SST12LP07 can also be config-
ured for high-efficiency operation, typically 17 dBm linear 54
Mbps 802.11g output power at 85 mA total power con-
sumption. High-efficiency operation is desirable in embed-
ded applications such as in hand-held units.
The SST12LP07 also features easy board-level usage
along with high-speed power-up/down control through a
single combined reference voltage pin. Ultra-low reference
current (total I
©2006 Silicon Storage Technology, Inc.
S71321-00-000
1
– Typically 29 dB gain across 2.4–2.5 GHz over
– >26 dBm P1dB
– Meets 802.11g OFDM ACPR requirement up to
– ~2.5% added EVM up to 19 dBm for
– Meets 802.11b ACPR requirement up to 22 dBm
current for both 802.11g/b applications
– ~22%/220 mA @ P
– ~21%/230 mA @ P
– I
– ~70 mA I
– Turn on/off time (10%- 90%) <100 ns
– Typical power-up/down delay with driver delay
High Gain:
temperature 0°C to +85°C
- Please refer to “Absolute Maximum Stress
22 dBm
54 Mbps 802.11g signal
included <200 ns
REF
2.4 GHz High-Power, High-Gain Power Amplifier
Ratings” on page 4
<2 mA
OUT
REF
CQ
= 22 dBm for 802.11g and 21% power-
~2 mA) makes the SST12LP07 controlla-
REF
OUT
5/06
power-up/down control
= 22 dBm for 802.11b.
OUT
OUT
SST12LP072.4 GHz High Gain High Power PA
= 22 dBm for 802.11g
= 22 dBm for 802.11b
SST12LP07
The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.
• High temperature stability
• Low shut-down current (< 0.1 µA)
• Excellent On-chip power detection
• 20 dB dynamic range on-chip power detection
• Simple input/output matching
• Packages available
• All non-Pb (lead-free) devices are RoHS compliant
APPLICATIONS:
• WLAN (IEEE 802.11g/b)
• Home RF
• Cordless phones
• 2.4 GHz ISM wireless equipment
ble by an on/off switching signal directly from the baseband
chip. These features coupled with low operating current
make the SST12LP07 ideal for the final stage power ampli-
fication in battery-powered 802.11g/b WLAN transmitter
applications.
The SST12LP07 has an excellent on-chip, single-ended
power detector, which features wide-range (~20 dB) with
dB-wise linearization and high stability over temperature (<
+/-0.3 dB 0°C to +85°C), frequency (<+/-0.3 dB across
Channels 1 through 14), and output load (<+/-0.4 dB
with 2:1 output VSWR all phases). The excellent on-
chip power detector provides a reliable solution to
board-level power control.
The SST12LP07 is offered in a 16-contact VQFN package.
See Figure 2 for pin assignments and Table 1 for pin
descriptions.
– ~1 dB gain/power variation between 0°C to +85°C
– <+/- 0.3dB variation between 0°C to +85°C
– <+/- 0.4dB variation with 2:1 VSWR mismatch
– <+/- 0.3dB variation Ch1 through Ch14
– 16-contact VQFN – 3mm x 3mm
These specifications are subject to change without notice.
Preliminary Specifications

Related parts for SST12LP07-QVCE

SST12LP07-QVCE Summary of contents

Page 1

... The SST12LP07 has excellent linearity, typically ~2.5% added EVM at 19 dBm output power which is essential for 54 Mbps 802.11g/n operation while meeting 802.11g spec- trum mask at 22 dBm. The SST12LP07 can also be config- ured for high-efficiency operation, typically 17 dBm linear 54 Mbps 802.11g output power total power con- sumption ...

Page 2

... Preliminary Specifications FUNCTIONAL BLOCKS FIGURE 1: Functional Block Diagram ©2006 Silicon Storage Technology, Inc. 2.4 GHz High-Power, High-Gain Power Amplifier RFIN Bias Circuit VREF SST12LP07 NC RFOUT 1321 B1.0 S71321-00-000 5/06 ...

Page 3

... GHz High-Power, High-Gain Power Amplifier SST12LP07 PIN ASSIGNMENTS FIGURE 2: Pin Assignments for 16-contact VQFN PIN DESCRIPTIONS TABLE 1: Pin Description Symbol Pin No. Pin Name GND 0 Ground Connection RFIN Connection VREF Connection Connection Connection Det 8 NC ...

Page 4

... 3.3V Min. Typ 3.0 3.3 220 230 2.75 2.85 4 SST12LP07 Max. Unit Test Conditions 3 0.1 µA 2.95 V S71321-00-000 T2 ...

Page 5

... GHz High-Power, High-Gain Power Amplifier SST12LP07 TABLE 3: AC Electrical Characteristics for Configuration Symbol Parameter F Frequency range L-U P Output power OUT @ PIN = -6 dBm 11b signals @ PIN = -7 dBm 11g signals G Small signal gain G Gain variation over band (2400~2485 MHz) VAR1 G Gain ripple over channel (20 MHz) ...

Page 6

... Frequency (GHz) FIGURE 3: S-Parameters ©2006 Silicon Storage Technology, Inc. 2.4 GHz High-Power, High-Gain Power Amplifier = 25°C, unless otherwise specified A 0 -10 -20 -30 -40 -50 -60 -70 -80 6.0 7.0 8.0 9.0 0.0 1 -10 -15 -20 -25 -30 6.0 7.0 8.0 9.0 0.0 1.0 6 SST12LP07 S12 versus Frequency 2.0 3.0 4.0 5.0 6.0 7.0 8.0 Frequency (GHz) S22 versus Frequency 2.0 3.0 4.0 5.0 6.0 7.0 8.0 Frequency (GHz) 1321 F3.0 S71321-00-000 9.0 9.0 5/06 ...

Page 7

... GHz High-Power, High-Gain Power Amplifier SST12LP07 TYPICAL PERFORMANCE CHARACTERISTICS Test Conditions 3.3V Freq=2.412 GHz 8 Freq=2.442 GHz Freq=2.484 GHz FIGURE 4: EMV versus Output Power 40 Freq=2.412 GHz 38 Freq=2.442 GHz 36 Freq=2.484 GHz ...

Page 8

... Silicon Storage Technology, Inc. 2.4 GHz High-Power, High-Gain Power Amplifier Supply Current versus Output Power Output Power (dBm) PAE versus Output Power Output Power (dBm) 8 SST12LP07 1321 F6 1321 F7.0 S71321-00-000 5/06 ...

Page 9

... GHz High-Power, High-Gain Power Amplifier SST12LP07 10 0 -10 -20 -30 -40 -50 -60 -70 2.3 5 FIGURE 8: 802.11g Spectrum Mask at 22 dBm 1.7 Freq = 2.412 GHz (25°C) 1.6 Freq = 2.442 GHz (25°C) Freq = 2.484 GHz (25°C) 1.5 Freq = 2.412 GHz (0°C) 1.4 Freq = 2.442 GHz (0°C) Freq = 2.484 GHz (0°C) 1.3 Freq = 2.412 GHz (85° ...

Page 10

... Detector Voltage versus Output Power Output Power (dBm) = 25°C, 1 Mbps 802.11B CCK signal 2.45 Frequency (GHz) 10 SST12LP07 1321 F10.1 Freq = 2.412 GHZ Freq = 2.442 GHz Freq = 2.484 GHz 2. 50 2.55 1321 F11.0 S71321-00-000 5/06 ...

Page 11

... GHz High-Power, High-Gain Power Amplifier SST12LP07 47pF 50 Ω / 0–20 mil 110 Ω VREG FIGURE 12: Typical Schematic for High-Power/High-Efficiency 802.11b/g Applications ©2006 Silicon Storage Technology, Inc Ω* 0.1 µF 6.8 nH 0.1 µ Bias Circuit ...

Page 12

... X Valid combinations for SST12LP07 SST12LP07-QVCE SST12LP07 Evaluation Kits SST12LP07-QVCE-K Note: Valid combinations are those products in mass production or will be in mass production. Consult your SST sales representative to confirm availability of valid combinations and to determine availability of new combinations. ©2006 Silicon Storage Technology, Inc. 2.4 GHz High-Power, High-Gain Power Amplifier ...

Page 13

... GHz High-Power, High-Gain Power Amplifier SST12LP07 PACKAGING DIAGRAMS TOP VIEW Pin #1 ± 0.075 3.00 ± 0.075 Note: 1. Complies with JEDEC JEP95 MO-220J, variant VEED-4 except external paddle nominal dimensions. 2. From the bottom view, the pin #1 indicator may be either a 45-degree chamfer or a half-circle notch. ...

Page 14

... Sijhih City, Taipei County 22101, Taiwan, R.O.C. Tel: +886-2-8698-1168 Fax: +886-2-8698-1169 E-mail: stzeng@sst.com KOREA SST Korea Charlie Shin Country Manager Rm# 1101 DonGu Root Bldg, 16-2 Sunae-Dong, Bundang-Gu, Sungnam, Kyunggi-Do Korea, 463-020 Tel: (82) 31-715-9138 Fax: (82) 31-715-9137 Email: cshin@sst.com www.SuperFlash.com or www.sst.com 14 SST12LP07 S71321-00-000 5/06 ...

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