upa503t Renesas Electronics Corporation., upa503t Datasheet
upa503t
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P-CHANNEL MOS FET (5-PIN 2 CIRCUITS) The PA503T is a mini-mold device provided with two MOS FET circuits. It achieves high-density mounting and saves mounting costs. FEATURES • Two source common MOS FET circuits in package the same size as ...
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ELECTRICAL CHARACTERISTICS (T PARAMETER SYMBOL Drain Cut-off Current I DSS Gate Leakage Current I GSS Gate Cut-off Voltage V GS(off) Forward Transfer Admittance | Drain to Source On-State Resistance R DS(on)1 Drain to Source On-State Resistance R ...
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TYPICAL CHARACTERISTICS (T DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 100 120 T - Case Temperature - ˚C C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE –120 –10 V ...
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DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 100 Pulsed measurement I = – – –4 –8 – Gate to Source Voltage - V GS DRAIN TO SOURCE ...
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REFERENCE Document Name NEC semiconductor device reliability/quality control system Quality grade on NEC semiconductor devices Semiconductor device mounting technology manual Guide to quality assurance for semiconductor devices Semiconductor selection guide PA503T Document No. TEI-1202 IEI-1209 C10535E MEI-1202 X10679E 5 ...
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No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC ...