qm15dx-2h Mitsumi Electronics, Corp., qm15dx-2h Datasheet - Page 4

• Manufacturer Part Number: qm15dx-2h
• Description: Mitsubishi Transistor Modules
• Manufacturer: Mitsumi Electronics, Corp.

10
10
10
10
10
10
1.0
0.8
0.6
0.4
0.2
3
2
7
5
4
3
2
7
5
4
3
–1
1
0
FORWARD BIAS SAFE OPERATING AREA
7
5
3
2
7
5
3
2
7
5
3
2
10
0
10
2
1
0
COLLECTOR-EMITTER VOLTAGE V
10
3 4 5 7
0
TRANSIENT THERMAL IMPEDANCE
–3
0
BASE REVERSE CURRENT –I
V
I
I
T
NON-REPETITIVE
CHARACTERISTIC (TRANSISTOR)
B1
C
2
2
2
CC
C
=15A
=25°C
=0.3A
SWITCHING TIME VS. BASE
3
3
3
=600V
4
4
4
T
T
j
j
5
5
5
10
=25°C
=125°C
CURRENT (TYPICAL)
7
7
7
–1
10
10
10
t
t
s
1
f
–2
1
2
TIME (s)
2
2
2
3
3
3
3 4 5 7
4
4
4
5
5
5
200µs
7
7
10
10
–1
2
10
2
2
100µs
0
3
3
B2
4
4
5
5
(A)
2 3
CE
7
7
10
(V)
10
3
0
100
10
10
10
40
30
20
10
90
80
70
60
50
40
30
20
10
0
0
7
5
4
3
2
7
5
4
3
2
2
1
0
COLLECTOR-EMITTER REVERSE VOLTAGE
REVERSE BIAS SAFE OPERATING AREA
COLLECTOR-EMITTER VOLTAGE V
0
0
0
REVERSE COLLECTOR CURRENT VS.
DERATING FACTOR OF F. B. S. O. A.
T
MITSUBISHI TRANSISTOR MODULES
j
COLLECTOR-EMITTER REVERSE
=125°C
20
CHARACTERISTICS) (TYPICAL)
CASE TEMPERATURE T
VOLTAGE (DIODE FORWARD
COLLECTOR
DISSIPATION
MEDIUM POWER SWITCHING USE
200
0.4
T
T
j
j
=25°C
=125°C
40
60
400
0.8
–V
CEO
80
600
1.2
(V)
100 120
I
SECOND
BREAKDOWN
AREA
B2
QM15DX-2H
I
=1A
B2
=–0.5A
800
1.6
C
INSULATED TYPE
( C)
140
CE
1000
160
2.0
(V)
Feb.1999