VS-60APU02-N3 VISHAY [Vishay Siliconix], VS-60APU02-N3 Datasheet

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VS-60APU02-N3

Manufacturer Part Number
VS-60APU02-N3
Description
Manufacturer
VISHAY [Vishay Siliconix]
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
VS-60APU02-N3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
VS-60APU02-N3
Quantity:
1 975
Company:
Part Number:
VS-60APU02-N3
Quantity:
70 000
Revision: 15-Aug-11
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Continuous forward current
Single pulse forward current
Maximum repetitive forward current
Operating junction and storage temperatures
ELECTRICAL SPECIFICATIONS (T
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
Reverse leakage current
Junction capacitance
Series inductance
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
TO-247AC modified
Cathode
VS-60EPU02PbF
VS-60EPU02-N3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
Diode variation
1
common
cathode
Package
T
V
Base
t
J
rr
I
F
F(AV)
V
max.
typ.
at I
R
2
VS-60EPU02PbF, VS-60EPU02-N3, VS-60APU02PbF, VS-60APU02-N3
www.vishay.com
Anode
F
Ultrafast Soft Recovery Diode, 60 A FRED Pt
3
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
SYMBOL
V
V
C
V
L
I
BR
R
TO-247AC modified (2 pins)
R
F
S
T
Anode
VS-60APU02PbF
VS-60APU02-N3
,
1
See Recovery table
common
cathode
TO-247AC
Base
TO-247AC,
I
I
I
V
T
V
Measured lead to lead 5 mm from package body
Single die
R
F
F
J
R
R
175 °C
= 60 A
= 60 A, T
1.08 V
= 100 μA
200 V
= 150 °C, V
60 A
= V
= 200 V
2
J
Anode
R
= 25 °C unless otherwise specified)
3
rated
SYMBOL
T
J
I
J
I
I
F(AV)
FSM
FRM
, T
V
= 175 °C
TEST CONDITIONS
R
R
Stg
= V
R
rated
T
T
Square wave, 20 kHz
1
C
C
TEST CONDITIONS
= 127 °C
= 25 °C
FEATURES
• Ultrafast recovery time
• Low forward voltage drop
• 175 °C operating junction temperature
• Output rectification
• Compliant to RoHS Directive 2002/95/EC
• Designed
• Halogen-free according to IEC 61249-2-21 definition
BENEFITS
• Reduced RFI and EMI
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION/APPLICATIONS
These diodes are optimized to reduce losses and EMI/RFI in
high frequency power conditioning systems.
The softness of the recovery eliminates the need for a
snubber in most applications. These devices are ideally
suited for HF welding, power converters and other
applications where switching losses are not significant
portion of the total losses.
JEDEC-JESD47
(-N3 only)
www.vishay.com/doc?91000
and
MIN.
200
qualified
-
-
-
-
-
-
Vishay Semiconductors
- 55 to 175
VALUES
200
800
120
DiodesEurope@vishay.com
60
TYP.
0.98
0.81
8.0
87
-
-
-
according
Document Number: 94021
®
MAX.
1.08
0.88
50
2
-
-
-
UNITS
to
°C
A
V
UNITS
mA
nH
μA
pF
V

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