DSS5540X-13 DIODES [Diodes Incorporated], DSS5540X-13 Datasheet - Page 3

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DSS5540X-13

Manufacturer Part Number
DSS5540X-13
Description
40V LOW VCE(sat) PNP SURFACE MOUNT TRANSISTOR
Manufacturer
DIODES [Diodes Incorporated]
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DSS5540X-13
Manufacturer:
DIODES
Quantity:
180
Electrical Characteristics
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 7)
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
DC Current Gain (Note 6)
Collector-Emitter Saturation Voltage (Note 7)
Equivalent On-Resistance
Base-Emitter Saturation Voltage
Base-Emitter Turn-on Voltage
Transition Frequency
Collector Capacitance
Turn-On Time
Delay Time
Rise Time
Turn-Off Time
Storage Time
Fall Time
Notes:
DSS5540X
Document number: DS31653 Rev. 2 - 2
Fig. 3 Typical Collector Current vs. Collector-Emitter Voltage
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
7. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
0
V , COLLECTOR-EMITTER VOLTAGE (V)
CE
1
Characteristic
2
@T
3
A
= 25°C unless otherwise specified
I = -3mA
I = -2mA
I = -1mA
I = -4mA
B
B
B
I = -5mA
B
B
4
5
Symbol
R
V
V
BV
BV
BV
V
I
I
CE(sat)
CE(sat)
BE(sat)
BE(on)
h
CBO
EBO
www.diodes.com
C
t
t
f
t
t
on
t
off
t
CBO
CEO
FE
EBO
T
d
s
r
f
c
3 of 5
Min
250
200
150
-40
-40
50
60
-6
1,000
-165
-150
Typ
350
280
232
-70
-30
800
600
400
200
63
15
48
48
0.001
0
Fig. 4 Typical DC Current Gain vs. Collector Current
T = -55°C
T = 85°C
T = 25°C
T = 125°C
-100
-100
-120
-170
-160
-340
-375
Max
-1.1
-1.2
-1.0
A
105
-50
-75
A
A
A
T = 150°C
A
I , COLLECTOR CURRENT (A)
C
0.01
MHz
Unit
mV
nA
μA
nA
pF
ns
ns
ns
ns
ns
ns
V
V
V
V
V
I
I
I
V
V
V
V
V
V
V
I
I
I
I
I
I
I
I
V
V
V
V
I
C
C
E
C
C
C
C
C
C
C
C
B1
CB
CB
EB
CE
CE
CE
CE
CE
CE
CB
CC
= -100μA
= -10mA
= -100μA
= -0.5A, I
= -1A, I
= -2A, I
= -4A, I
= -5A, I
= -5A, I
= -4A, I
= -5A, I
= -I
0.1
= -5V, I
= -10V, I
= -30V, I
= -30V, I
= -2V, I
= -2V, I
= -2V, I
= -2V, I
= -2V, I
= -10V, I
= -10V, I
B2
= -200mA
B
B
B
B
B
B
B
Test Conditions
= -10mA
= -200mA
= -200mA
= -500mA
= -500mA
= -200mA
= -500mA
C
B
C
C
C
C
C
E
E
C
E
C
= -5mA
= 0
= -0.5A
= -1A
= -2A
= -5A
= -2A
= 0
= 0, T
= 0A, f = 1MHz
= -2A,
= -0.1A, f = 100MHz
1
V
CE
DSS5540X
A
= -1V
© Diodes Incorporated
= 150°C
October 2010
10

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