DSS2515M DIODES [Diodes Incorporated], DSS2515M Datasheet - Page 2

• Manufacturer Part Number: DSS2515M
• Description: 15V LOW VCE(sat) NPN SURFACE MOUNT TRANSISTOR
• Manufacturer: DIODES [Diodes Incorporated]

Thermal Characteristics
Maximum Ratings
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Peak Pulse Collector Current
Peak Base Current
Power Dissipation (Note 4) @ T
Thermal Resistance, Junction to Ambient (Note 4) @ T
Operating and Storage Temperature Range
Notes:
DSS2515M
Document number: DS31816 Rev. 3 - 2
1,000
100
0.1
10
1E-06
4. Device mounted on FR-4 PCB with minimum recommended pad layout.
1
Fig. 2 Single Pulse Maximum Power Dissipation
0.001
0.000001
0.0001
0.01
0.1
t , PULSE DURATION TIME (s)
1
1
D = 0.005
D = 0.5
D = 0.05
D = 0.02
D = 0.01
D = 0.7
D = 0.3
D = 0.1
D = 0.9
Characteristic
Characteristic
@T
0.00001
0.01
A
A
D = Single Pulse
= 25°C
= 25°C unless otherwise specified
0.0001
1
R
T - T = P * R
R
θJA
J
θ
Single Pulse
JA
(t) = r(t) *
A
= 500°C/W
100
0.001
A
R
θ
= 25°C
JA
θ
JA
(t)
Fig. 1 Transient Thermal Response
10,000
t , PULSE DURATION TIME (s)
1
0.01
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2 of 5
0.1
T
Symbol
Symbol
0.30
0.25
0.20
0.15
0.10
0.05
J
Fig. 3 Power Dissipation vs. Ambient Temperature (Note 4)
V
V
V
R
, T
I
I
P
CBO
CEO
EBO
I
CM
BM
0
θ JA
1
C
D
STG
0
R
θJA
= 500°C/W
T , AMBIENT TEMPERATURE ( C)
10
A
50
P(pk)
Duty Cycle, D = t /t
T - T = P * R
R
J
R
θJA
-55 to +150
100
θ
JA
t
(t) = r(t) *
A
1
Value
Value
t
= 500°C/W
500
100
250
500
2
15
15
6
1
100
θ
R
1,000
JA
1 2
θ
JA
(t)
10,000
150
°
DSS2515M
© Diodes Incorporated
°C/W
Unit
Unit
mW
mA
mA
January 2011
°C
V
V
V
A
200