STT4443 SECOS [SeCoS Halbleitertechnologie GmbH], STT4443 Datasheet

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STT4443

Manufacturer Part Number
STT4443
Description
-2.3A , -30V , RDS(ON) 120 m P-Channel Enhancement Mode MOSFET
Manufacturer
SECOS [SeCoS Halbleitertechnologie GmbH]
Datasheet
1.STT4443.pdf (4 pages)
http://www.SeCoSGmbH.com/
02-Dec-2011 Rev. B
DESCRIPTION
FEATURES
MARKING
PACKAGE INFORMATION
ABSOLUTE MAXIMUM RATINGS (
achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device. The TSOP-6
package is universally used for all commercial-industrial
applications.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Maximum Junction to Ambient
4443

Simple Drive Requirement
Smaller Outline Package
Surface mount package
STT4443 utilized advanced processing techniques to
Package
TSOP-6
Elektronische Bauelemente
Date Code
1
3
Parameter
MPQ
3K
3
A suffix of “-C” specifies halogen and lead-free
T
Leader Size
A
=25°C unless otherwise specified)
RoHS Compliant Product
Thermal Resistance Rating
7 inch
T
T
T
A
A
A
=25°C
=70°C
=25°C
P-Channel Enhancement Mode MOSFET
Symbol
T
R
V
V
j
I
, T
P
-2.3A , -30V , R
I
DM
GS
 JA
DS
D
D
stg
D G
F
REF.
STT4443
C
D
A
B
E
F
Any changes of specification will not be informed individually.
6
1
Min.
A
E
2.70
2.60
1.40
0.30
5
2
Millimeter
1.10 MAX.
1.90 REF.
TOP VIEW
4
3
DS(ON)
TSOP-6
Max.
3.10
3.00
1.80
0.50
Ratings
-55~150
L
B
1.14
0.01
±20
-2.3
-1.8
110
-30
-10
K
REF.
120 m
G
H
K
J
L
Min.
0°
Millimeter
0.60 REF.
0.12 REF.
0.95 REF.
0
C
Max.
0.10
10°
Page 1 of 4
W / °C
°C / W
Unit
H
J
°C
W
V
V
A
A

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STT4443 Summary of contents

Page 1

... Elektronische Bauelemente DESCRIPTION STT4443 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The TSOP-6 package is universally used for all commercial-industrial applications. FEATURES Simple Drive Requirement  Smaller Outline Package  Surface mount package  MARKING 4443  ...

Page 2

... C - 260 - iss oss rss Rg - 4.3 5 Source-Drain Diode -1 STT4443 120 m DS(ON) Unit Teat Conditions -250uA -250uA ± 20V -30V μ -24V -10V, I ...

Page 3

... Elektronische Bauelemente CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 02-Dec-2011 Rev. B STT4443 -2.3A , -30V , R 120 m DS(ON) P-Channel Enhancement Mode MOSFET Any changes of specification will not be informed individually. Page ...

Page 4

... Elektronische Bauelemente CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 02-Dec-2011 Rev. B STT4443 -2.3A , -30V , R 120 m DS(ON) P-Channel Enhancement Mode MOSFET Any changes of specification will not be informed individually. Page ...

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