m28f010 Intel Corporation, m28f010 Datasheet - Page 10

• Manufacturer Part Number: m28f010
• Description: 1024k 128k X 8 Cmos Flash Memory
• Manufacturer: Intel Corporation

M28F010
10
NOTES
1 See DC Characteristics for value of V
power supply can be hard-wired to the device or
switchable When V
ground no-connect with a resistor tied to ground or as
defined in Characteristics Section Refer to Principles
of Operation
PP
is switched V
Figure 5 M28F010 Quick-Erase Algorithm
PPH
PPL
271111 – 6
The V
may be
PP
Operation
Standby
Write
Write
Standby
Write
Standby
Read
Standby
Write
Standby
2 Erase Verify is performed only after chip-erasure A
final read compare may be performed (optional) after
the register is written with the read command
3 CAUTION The algorithm MUST BE FOLLOWED
to ensure proper and reliable operation of the de-
vice
Bus
Command
Set-up
Erase
Erase
Erase
Verify
Read
Entire Memory Must
Before Erasure
Use Quick-Pulse
Programming Algorithm
(Figure 4)
Wait for V
Initialize Addresses and
Pulse-Count
Data
Data
Duration of Erase Operation
(t
Addr
Data
Operation
t
Read Byte to Verify Erasure
Compare Output to FFH
Increment Pulse-Count
Data
Register for Read Operations
Wait for V
WHGL
WHWH2
e
e
e
e
e
20H
20H
Byte to Verify
A0H Stops Erase
00H Resets the
)
Comments
PP
PP
Ramp to V
Ramp to V
e
PPH
PPL
00H
(1)
(1)