k9f5608u0m-yib0 Samsung Semiconductor, Inc., k9f5608u0m-yib0 Datasheet - Page 21

• Manufacturer Part Number: k9f5608u0m-yib0
• Description: Nand Flash Memory
• Manufacturer: Samsung Semiconductor, Inc.

K9F5608U0M-YCB0,K9F5608U0M-YIB0
R/B
I/O
RE
I/O
CLE
CE
WE
ALE
R/B
Figure 4. Read2 Operation
Figure 5. Sequential Row Read1 Operation
0
Block
0
~
~
7
7
The Sequential Read 1 and 2 operation is allowed only within a block and after the last page of a block is read-
out, the sequential read operation must be terminated by bringing CE high. When the page address moves onto
the next block, read command and address must be given.
00h
01h
1st half array
(GND input=L, 00h Command)
50h
(A
Don't Care)
4
Data Field
~ A
Start Add.(3Cycle)
7
A
Start Add.(3Cycle)
A
:
0
0
~ A
2nd half array
~ A
7
3
& A
& A
9
Spare Field
9
~ A
~ A
24
24
1st
2nd
Nth
t
R
t
1st half array
R
1st half array
Data Field
Data Output
(GND input=L, 01h Command)
1st
Data Field
2nd half array
21
2nd half array
Spare Field
t
R
Spare Field
Data Output
(528 Byte)
1st
2nd
Nth
Data Output(Sequential)
2nd
Spare Field
1st half array
FLASH MEMORY
(GND input=H, 00h Command)
t
Data Field
R
2nd half array
Data Output
(528 Byte)
Spare Field
Nth
1st
2nd
Nth