gvt73128a8 ETC-unknow, gvt73128a8 Datasheet

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gvt73128a8

Manufacturer Part Number
gvt73128a8
Description
128k X 8 Sram
Manufacturer
ETC-unknow
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
gvt73128a8J-10
Quantity:
8 000
FEATURES
• Fast access times: 10, 12, 15and 20ns
• Fast OE# access times: 5, 6, 7 and 8ns
• Single +3.3V+0.3V power supply
• Fully static -- no clock or timing strobes necessary
• All inputs and outputs are TTL-compatible
• Three state outputs
• Center power and ground pins for greater noise immunity
• JEDEC standard for functionality and revolutionary pinout
• Easy memory expansion with CE# and OE# options
• Automatic CE# power down
• High-performance, low-power consumption, CMOS
OPTIONS
• Timing
• Packages
• Power consumption
• Temperature
Galvantech, Inc. 3080 Oakmead Village Drive, Santa Clara, CA 95051
Tel (408) 566-0688
Rev. 3/97
GALVANTECH
ASYNCHRONOUS
SRAM
double-poly, double-metal process
10ns access
12ns access
15ns access
20ns access
32-pin SOJ (400 mil)
32-pin SOJ (300 mil)
Standard
Low
Commercial
Industrial
Fax (408) 566-0699
MARKING
-10
-12
-15
-20
J
SJ
None
L
None
I
(
(
0°C
-40°C
, INC.
to
70°C)
to
85°C)
REVOLUTIONARY PINOUT 128K X 8
GENERAL DESCRIPTION
using a four-transistor memory cell with a high performance,
silicon gate, low-power CMOS process. Galvantech SRAMs
are fabricated using double-layer polysilicon, double-layer
metal technology.
improved performance and noise immunity. Static design
eliminates the need for external clocks or timing strobes. For
increased system flexibility and eliminating bus contention
problems, this device offers chip enable (CE#) and output
enable (OE#) with this organization.
enable (WE#) and chip enable (CE#) inputs are both LOW.
Reading is accomplished when (CE#) and (OE#) go LOW
with (WE#) remaining HIGH. The device offers a low power
standby mode when chip is not selected. This allows system
designers to meet low standby power requirements.
The GVT73128A8 is organized as a 131,072 x 8 SRAM
This device offers center power and ground pins for
Writing to these devices is accomplished when write
128K x 8 SRAM
+3.3V SUPPLY, SINGLE CHIP ENABLE
REVOLUTIONARY PINOUT
WE#
VCC
DQ1
DQ2
DQ3
DQ4
VSS
CE#
A16
A15
A14
A13
A3
A2
A1
A0
PIN ASSIGNMENT
10
11
12
13
14
15
16
1
2
3
4
5
6
7
8
9
32-Pin SOJ
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
GVT73128A8
Galvantech, Inc. reserves the right to change
products or specifications without notice.
A4
A5
A6
A7
OE#
DQ8
DQ7
VSS
VCC
DQ6
DQ5
A8
A9
A10
A11
A12

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gvt73128a8 Summary of contents

Page 1

... REVOLUTIONARY PINOUT 128K X 8 128K x 8 SRAM +3.3V SUPPLY, SINGLE CHIP ENABLE REVOLUTIONARY PINOUT GENERAL DESCRIPTION The GVT73128A8 is organized as a 131,072 x 8 SRAM using a four-transistor memory cell with a high performance, silicon gate, low-power CMOS process. Galvantech SRAMs are fabricated using double-layer polysilicon, double-layer metal technology. ...

Page 2

... When CE# is HIGH, the chip is disabled and automatically goes into standby power mode. Input Output Enable: This active LOW input enables the output drivers. + Power Supply: 3.3V 0.3V Ground 2 GVT73128A8 POWER DOWN DESCRIPTION Galvantech, Inc. reserves the right to change products or specifications without notice. VCC VSS DQ1 DQ8 ...

Page 3

... VCC VCC SYM TYP ; VCC =MAX; Icc 60 standard IL standard I 12 MAX SB1 standard I 0.02 SB2 CONDITIONS SYMBOL MHz C I VCC = 3.3V C I/O 3 GVT73128A8 MIN MAX UNITS 2.2 VCC+0.5 V -0.5 0 2.4 V 0.4 V 3.0 3.6 V -10 -12 -15 -20 POWER 140 120 100 80 low ...

Page 4

... WP2 WP1 LZWE 3 4 HZWE GVT73128A8 - MAX MIN MAN UNITS NOTES ...

Page 5

... Capacitance derating applies to capacitance different from the load capacitance shown in Fig. 1. 14. Typical values are measured at 3.3V HZCE is less CONDITIONS SYMBOL Vcc = 2V CCDR I Vcc = 3V CCDR t CDR GVT73128A8 1. 1.5V Fig. 1 OUTPUT LOAD EQUIVALENT Fig. 1 OUTPUT LOAD EQUIVALENT 3.3v +5V 317 480 ...

Page 6

... READ CYCLE NO VALID (7, 8, 10, 12) READ CYCLE NO AOE t LZOE t ACE t LZCE HIGH Z 6 GVT73128A8 4.5V 3. DATA VALID t HZCE t HZOE DATA VALID DON'T CARE UNDEFINED Galvantech, Inc. reserves the right to change products or specifications without notice. ...

Page 7

... WP2 AS DATA VALID t HZWE (12, 13) WRITE CYCLE NO WP1 AS DATA VALID HIGH Z 7 GVT73128A8 LZWE HIGH DON'T CARE UNDEFINED Galvantech, Inc. reserves the right to change products or specifications without notice. ...

Page 8

... D Q March 7, 1997 Rev. 3/97 , INC. REVOLUTIONARY PINOUT 128K X 8 (12, 13) WRITE CYCLE NO. 3 (Chip Enable Controlled WP1 DATA VALID HIGH Z 8 GVT73128A8 DON'T CARE Galvantech, Inc. reserves the right to change products or specifications without notice. ...

Page 9

... MIN .825 (20.96) .810 (20.57) .340 (8.64) .330 (8.38) .050 (1.27) TYP .020 (0.51) .015 (0.38) MAX or typical, min where noted. MIN 9 GVT73128A8 .380 (9.65) .360 (9.14) .030 (0.76) MIN .140 (3.55) .120 (3.04) .095 (2.41) .080 (2.03) .274 (6.95) .254 (6.44) .025 (0.63) Galvantech, Inc. reserves the right to change products or specifications without notice. ...

Page 10

... Ordering Information GVT 73128A8 Galvantech Prefix Part Number March 7, 1997 Rev. 3/97 , INC. REVOLUTIONARY PINOUT 128K GVT73128A8 Temperature (Blank = Commercial I = Industrial) Power (Blank= Standard, L= Low Power) Speed (10 = 10ns, 12= 12ns 15 = 15ns 20ns) Package (J = 400 mil SOJ, SJ= 300 mil SOJ) Galvantech, Inc. reserves the right to change products or specifications without notice. ...

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