gvt7164b19 ETC-unknow, gvt7164b19 Datasheet

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gvt7164b19

Manufacturer Part Number
gvt7164b19
Description
Synchronous Burst Sram
Manufacturer
ETC-unknow
Datasheet

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FEATURES
• Fast access times: 8, 9, 10, and 12ns
• Fast clock speed: 83, 66, and 50 MHz
• Provide high performance 2-1-1-1 access rate
• Fast OE# access times: 5 and 6ns
• Single +5V +5% power supply
• 3.3V I/O compatible
• Clamp diodes to VSS at all inputs and outputs
• Common data inputs and data outputs
• Byte writeable via dual write enables
• Address, data and control registers
• Internally self-timed WRITE CYCLE
• Automatic power-down for low power applications
• High board density 52-lead PLCC packages
OPTIONS
• Timing
• Packages
Galvantech, Inc. 3080 Oakmead Village Drive, Santa Clara, CA 95051
Tel (408) 566-0688
Rev. 12/97
SYNCHRONOUS
BURST SRAM
GALVANTECH
8ns access/12ns cycle
9ns access/15ns cycle
10ns access/15ns cycle
12ns access/20ns cycle
52-pin PLCC
Fax (408) 566-0699
MARKING
-8
-9
-10
-12
C
, INC.
64K X 18 SYNCHRONOUS BURST SRAM
GENERAL DESCRIPTION
employs high-speed, low power CMOS designs using
advanced double-layer polysilicon, double-layer metal
technology. Each memory cell consists of four transistors and
two high valued resistors.
cells with advanced synchronous peripheral circuitry and a 2-
bit counter for internal burst operation. All synchronous
inputs are gated by registers controlled by a positive-edge-
triggered clock input (CLK). The synchronous inputs include
all addresses, all data inputs, chip enable (CE#), burst control
inputs (ADSC#, ADSP#, and ADV#), and write enables
(WEL# and WEH#).
The data outputs (DQ), enabled by OE#, are also
asynchronous.
address status processor (ADSP#) or address status controller
(ADSC#) input pins. Subsequent burst addresses can be
internally generated as controlled by the burst advance pin
(ADV#).
chip to initiate self-timed WRITE cycle. WRITE cycles can
be one or two bytes wide as controlled by the write control
inputs. Individual byte enables allow individual bytes to be
written. WEL# controls DQ1-DQ8 and DQP1. WEH#
controls DQ9-DQ16 and DQP2.
All inputs and outputs are TTL-compatible. The device is
ideally suited for 486, Pentium
are benefited from a wide synchronous data bus.
The Galvantech Synchronous Burst SRAM family
The GVT7164B19 SRAM integrates 65,536 x18 SRAM
Asynchronous input includes the output enable (OE#).
Addresses and chip enables are registered with either
Address, data inputs, and write controls are registered on-
The GVT7164B19 operates from a +5V power supply.
64K x 18 SRAM
+5V SUPPLY WITH CLOCKED,
REGISTERED INPUTS, BURST COUNTER
TM
, 680x0, and for systems that
GVT7164B19
Pentium is a trademark of Intel Corporation.
Galvantech, Inc. reserves the right to change
products or specifications without notice.

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gvt7164b19 Summary of contents

Page 1

... Individual byte enables allow individual bytes to be written. WEL# controls DQ1-DQ8 and DQP1. WEH# controls DQ9-DQ16 and DQP2. The GVT7164B19 operates from a +5V power supply. All inputs and outputs are TTL-compatible. The device is ideally suited for 486, Pentium are benefited from a wide synchronous data bus. ...

Page 2

... December 4, 1997 Rev. 12/97 , INC. 64K X 18 SYNCHRONOUS BURST SRAM UPPER BYTE WRITE D Q LOWER BYTE WRITE D Q ENABLE D Q Input Register Address Register CLR Binary Counter & Logic 2 GVT7164B19 DQ1-DQ16 DQP1 DQP2 Galvantech, Inc. reserves the right to change products or specifications without notice. ...

Page 3

... DQ16 19 DQP2 December 4, 1997 Rev. 12/97 , INC. 64K X 18 SYNCHRONOUS BURST SRAM PIN ASSIGNMENT (Top View 52-pin PLCC GVT7164B19 DQP1 46 DQ8 45 DQ7 44 VCC 43 VSS 42 DQ6 41 DQ5 40 DQ4 39 DQ3 38 VSS 37 VCC 36 DQ2 ...

Page 4

... Parity Inputs/Outputs: DQP1 is parity bit for DQ1-DQ8 and DQP2 is parity bit for DQ9-DQ16. Supply: + Ground: GND Third Address Fourth Address (internal) (internal) A...A10 A...A11 A...A11 A...A10 A...A00 A...A01 A...A01 A...A00 4 GVT7164B19 Galvantech, Inc. reserves the right to change products or specifications without notice. ...

Page 5

... WEL# CE# OE GVT7164B19 OE# CLK DQ X L-H High-Z X L-H High L-H High L-H High L-H High L-H High-Z X L-H D Galvantech, Inc. reserves the right to change products or specifications without notice. ...

Page 6

... SB2 SB3 I 30 SB4 ; VCC = MAX; IH CONDITIONS SYMBOL MHz C I VCC = 5. CONDITIONS SYMBOL PLCC TYP Still air, soldered on 4. 1.125 inch 4-layer PCB JC 6 GVT7164B19 MIN MAX UNITS 2.2 VCC+0.3 V -0.5 0 2.4 3.3 V 0.4 V 4.75 5. -10 -12 UNITS NOTES ...

Page 7

... KQX KQLZ 5 6 KQHZ OEQ OELZ 0 0 OEHZ 2.5 2 0.5 0.5 TYP MAX KQ 0.016 7 GVT7164B19 -10 -12 MIN MAX MIN MAN UNITS 2.5 3 0.5 0.5 UNITS NOTES Galvantech, Inc. reserves the right to change products or specifications without notice. ...

Page 8

... See Figures 1 and / increases with greater t KQHZ is less o C and 20ns cycle time. 8 GVT7164B19 1.5V Fig. 1 OUTPUT LOAD EQUIVALENT +5V 480 Q 255 5 pF Fig. 2 OUTPUT LOAD EQUIVALENT Galvantech, Inc. reserves the right to change products or specifications without notice. ...

Page 9

... WEH#, WEL# CE# ADV# OE KQLZ DQ SINGLE READ December 4, 1997 Rev. 12/97 , INC. 64K X 18 SYNCHRONOUS BURST SRAM READ TIMING OEQ t OELZ Q(A1) Q(A2) Q(A2+1) 9 GVT7164B19 t H Q(A2+2) Q(A2+3) Q(A2) Q(A2+1) BURST READ Galvantech, Inc. reserves the right to change products or specifications without notice. Q(A2+2) ...

Page 10

... ADDRESS WEH#, WEL# CE# ADV# OE# t KQX DQ Q SINGLE WRITE December 4, 1997 Rev. 12/97 , INC. 64K X 18 SYNCHRONOUS BURST SRAM WRITE TIMING OEHZ D(A1) D(A2) D(A2+2) D(A2+2) BURST WRITE 10 GVT7164B19 D(A2+2) D(A2+3) D(A3) D(A3+1) BURST WRITE Galvantech, Inc. reserves the right to change products or specifications without notice. D(A3+2) ...

Page 11

... ADSP# ADSC ADDRESS WEH#, WEL# CE# ADV# OE# DQ Q(A1) Single Reads December 4, 1997 Rev. 12/97 , INC. 64K X 18 SYNCHRONOUS BURST SRAM READ/WRITE TIMING Q(A2) D(A3) Q(A4) Single Write 11 GVT7164B19 A5 Q(A4+1) Q(A4+2) Q(A4+3) D(A5) D(A5+1) Burst Read Burst Write Galvantech, Inc. reserves the right to change products or specifications without notice. ...

Page 12

... December 4, 1997 Rev. 12/97 , INC. 64K X 18 SYNCHRONOUS BURST SRAM .795 (20.19) .785 (19.94) .756 (19.20) .750 (19.05) .050 (1.27) TYP .795 (20.19) .785 (19.94) .021 (0.53) .013 (0.33) .730 (18.54) .690 (17.53) MAX or typical where noted. MIN 12 GVT7164B19 .600 (15.24) TYP .020 (0.51) MIN Galvantech, Inc. reserves the right to change products or specifications without notice. ...

Page 13

... Galvantech Prefix Part Number December 4, 1997 Rev. 12/97 , INC. 64K X 18 SYNCHRONOUS BURST SRAM 13 GVT7164B19 Speed (8 = 8ns access/12ns cycle 9 = 9ns access/15ns cycle 10 = 10ns access/15ns cycle 12 = 12ns access/20ns cycle) Package ( PIN PLCC) Galvantech, Inc. reserves the right to change products or specifications without notice. ...

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