gvt71256t18 Cypress Semiconductor Corporation., gvt71256t18 Datasheet - Page 10

• Manufacturer Part Number: gvt71256t18
• Description: 256k X 18 Synchronous-pipelined Cache Tag Ram Semiconductor
• Manufacturer: Cypress Semiconductor Corporation.

TAP DC Electrical Characteristics
Document #: 38-05120 Rev. **
V
V
IL
IL
V
V
V
V
Notes:
Parameter
14. X = 53 for this device.
15. All Voltage referenced to V
16. Overshoot: V
17. This parameter is sampled.
TDI
IH
Il
OLC
OHC
OLT
OHT
I
O
During normal operation, V
TDI
TDI
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
Input Leakage Current
Output Leakage Current
LVCMOS Output Low Voltage
LVCMOS Output High Voltage
LVTTL Output Low Voltage
LVTTL Output High Voltage
IH
(AC)<V
Selection
Circuitry
CC
1.5V for t<t
SS
CCQ
Description
(GND).
must not exceed V
KHKH
/2, Undershoot: V
[15]
[15, 16]
[15]
Figure 2. TAP Controller Block Diagram
[15, 16]
31
x
[15, 17]
CC
(20°C < T
[15, 17]
. Control input signals (such as GW, ADSC, etc.) may not have pulse widths less than t
30
Identification Register
.
TAP Controller
IL
Instruction Register
(AC)<–0.5V for t<t
29
.
0V < V
Output disabled,
0V < V
I
I
I
I
OLC
OHC
OLT
OHT
j
Boundary Scan Register
< 110°C; V
= 8.0 mA
= 100 A
= 8.0 mA
= 100 A
Test Conditions
.
.
IN
IN
Bypass Register
< V
< V
.
.
CC
CC
CCQ
KHKH
2
2
2
= 3.3V –0.2V and +0.3V unless otherwise noted)
/2, Power-up: V
1
1
1
CY7C1359A/GVT71256T18
0
0
0
0
[14]
IH
<3.6V and V
V
CC
Min.
–0.3
–5.0
–5.0
2.0
2.4
– 0.2
CC
<3.135V and V
Selection
Circuitry
V
CC
CCQ
Max.
0.8
5.0
5.0
0.2
0.4
+ 0.3
<1.4V for t<200 ms.
Page 10 of 24
KHKL
(min.).
TDO
Unit
V
V
V
V
V
V
A
A