k6r1004v1c-c Samsung Semiconductor, Inc., k6r1004v1c-c Datasheet - Page 8

• Manufacturer Part Number: k6r1004v1c-c
• Description: 256kx4 Bit With Oe High-speed Cmos Static Ram 3.3v Operating .
• Manufacturer: Samsung Semiconductor, Inc.

DATA RETENTION WAVE FORM
K6R1004V1C-C/C-L, K6R1004V1C-I/C-P
DATA RETENTION CHARACTERISTICS*
* The above parameters are also guaranteed at industrial temperature range.
Data Retention Characteristic is for L-ver only.
V
Data Retention Current
Data Retention Set-Up Time
Recovery Time
CS controlled
CC
for Data Retention
V
4.5V
V
V
CS
GND
CC
IH
DR
Parameter
Symbol
t
t
V
I
SDR
RDR
DR
DR
t
SDR
CS V
V
V
V
V
See Data Retention
Wave form(below)
CC
IN
CC
IN
(T
=3.0V, CS V
=2.0V, CS V
V
V
CC
CC
CC
A
Test Condition
=0 to 70 C)
-0.2V
-0.2V or V
-0.2V or V
- 8 -
CCPCCCRCELIMINARY
Data Retention Mode
CS V
CC
CC
IN
IN
-0.2V
-0.2V
0.2V
0.2V
CC
- 0.2V
Preliminary
Min.
2.0
0
5
-
-
PRELIMINARY
Typ.
-
-
-
-
-
CMOS SRAM
t
RDR
PRELIMINARY
Max.
3.6
0.4
0.3
-
-
Revision 2.0
April 2000
Unit
mA
ms
ns
V