upa1914te Renesas Electronics Corporation., upa1914te Datasheet - Page 2

• Manufacturer Part Number: upa1914te
• Description: P-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

ELECTRICAL CHARACTERISTICS (T
TEST CIRCUIT 1 SWITCHING TIME
2
V
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
0
GS
Duty Cycle
PG.
= 1 s
CHARACTERISTICS
R
G
R
= 10
1 %
G
D.U.T.
R
V
L
DD
V
Wave Form
I
Wave Form
D
GS
SYMBOL
R
R
R
V
V
| y
V
I
t
t
Q
I
I
DS(on)1
DS(on)2
DS(on)3
C
C
C
C
Q
D
GS(off)
C
C
Q
A
d(on)
d(off)
F(S-D)
Q
DSS
GSS
GS
t
t
t
0
0
oss
oss
GS
GD
rr
fs
iss
rss
iss
rss
r
f
G
rr
10 %
= 25 °C)
10 %
|
t
d(on)
Data Sheet D13810EJ2V0DS
t
90 %
V
V
V
V
V
V
V
V
V
f = 1 MHz
V
V
f = 1 MHz
V
I
V
R
V
I
V
I
I
di/dt = 100 A/ s
on
D
D
F
F
DS
GS
DS
DS
GS
GS
GS
DS
GS
DS
GS
DD
GS(on)
DD
GS
G
= –2.5 A
= –4.5 A
= 4.5 A, V
= 4.5 A, V
t
r
= 10
= –24 V
= –30 V, V
= ±16 V, V
= –10 V, I
= –10 V, I
= –10 V, I
= –4.5 V, I
= –4.0 V, I
= –10 V
= 0 V
= –25 V
= 0 V
= –15 V
= –10 V
V
I
GS(on)
D
t
= –10 V
d(off)
TEST CONDITIONS
t
off
GS
GS
90 %
90 %
D
D
D
t
10 %
D
D
GS
DS
= 0 V
f
= 0 V
= –1 mA
= –2.5 A
= –2.5 A
= –2.5 A
= –2.5 A
= 0 V
= 0 V
PG.
TEST CIRCUIT 2 GATE CHARGE
I
G
50
= 2 mA
MIN.
–1.0
1
D.U.T.
TYP.
–1.6
0.88
589
210
546
148
7.1
1.5
2.8
43
58
64
86
65
16
57
63
80
11
22
11
MAX.
–2.5
–10
57
86
96
10
PA1914
R
V
UNIT
L
DD
m
m
m
pF
pF
pF
pF
pF
pF
nC
nC
nC
nC
ns
ns
ns
ns
ns
V
S
V
A
A