hat2035r Renesas Electronics Corporation., hat2035r Datasheet - Page 2

• Manufacturer Part Number: hat2035r
• Description: Silicon N Channel Power Mos Fet High Speed Power Switching
• Manufacturer: Renesas Electronics Corporation.

HAT2035R
Electrical Characteristics
Drain to Source breakdown
voltage
Gate to Source breakdown voltage V
Gate to Source leak current
Zero Gate voltage Drain current
Gate to Source cutoff voltage
Static Drain to Source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–Drain diode forward voltage
Body–Drain diode reverse
recovery time
Notes: 4. Pulse test
Rev.1.00 Jun. 09, 2005, page 2 of 3
Item
Symbol
V
R
R
R
V
Coss
(BR)DSS
(BR)GSS
Crss
Ciss
t
t
I
I
V
GS(off)
|y
DS(on)
DS(on)
DS(on)
d(on)
d(off)
GSS
DSS
t
t
t
DF
rr
fs
r
f
|
0.56
Min
150
1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
15
0.86
Typ
1.6
1.9
2.4
0.9
95
42
11
16
18
14
90
—
—
—
—
—
9
Max
±10
2.1
2.2
2.7
5.5
1.4
—
—
—
—
—
—
—
—
—
—
—
5
Unit
pF
pF
pF
ns
ns
ns
ns
ns
V
V
V
S
V
A
A
I
I
V
V
V
I
I
I
I
V
V
f = 1 MHz
V
V
IF = 0.5 A, V
IF = 0.5 A, V
diF/ dt = 50 A/ s
D
G
D
D
D
D
GS
DS
DS
DS
GS
GS
DD
= 10 mA, V
= 100 A, V
= 0.5 A, V
= 0.5 A, V
= 2 A, V
= 0.5 A, V
= 150 V, V
= 10 V, I
= 10 V
= 12 V, V
= 0
= 5 V, I
30 V
Test Conditions
GS
D
GS
GS
DS
GS
GS
D
= 5 V
= 0.5 A,
GS
= 1 mA
DS
GS
= 10 V
= 10 V
= 4 V
= 0
= 0
DS
= 0
= 0
= 0
= 0
Note4
Note4
(Ta = 25°C)
Note4
Note4
Note4