bso065n03msg Infineon Technologies Corporation, bso065n03msg Datasheet - Page 2

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bso065n03msg

Manufacturer Part Number
bso065n03msg
Description
Optimos 3 M-series Power- Power Mosfet
Manufacturer
Infineon Technologies Corporation
Datasheet
Rev.1.0
1)
connection. PCB is vertical in still air.
2)
3)
Parameter
Thermal characteristics
Thermal resistance,
junction - soldering point
Thermal resistance,
junction - ambient
Electrical characteristics, at T
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
See figure 3 for more detailed information
See figure 13 for more detailed information
j
=25 °C, unless otherwise specified
Symbol Conditions
R
R
V
V
I
I
R
R
g
DSS
GSS
fs
(BR)DSS
GS(th)
thJS
thJA
DS(on)
G
minimal footprint,
t
minimal footprint,
steady state
6 cm
t
6 cm
steady state
V
V
V
T
V
T
V
V
V
|V
I
p
p
D
page 2
≤10 s
≤10 s
j
j
GS
DS
DS
DS
GS
GS
GS
=25 °C
=125 °C
=16 A
DS
=V
=30 V, V
=30 V, V
=0 V, I
=16 V, V
=4.5 V, I
=10 V, I
|>2|I
2
2
cooling area
cooling area
GS
, I
D
|R
D
D
=1 mA
D
=250 µA
D
GS
GS
DS
DS(on)max
=16 A
=14.2 A
=0 V,
=0 V,
=0 V
1)
1)
,
,
,
min.
0.6
30
25
1
-
-
-
-
-
-
-
-
-
-
Values
typ.
0.1
6.4
5.4
1.3
10
10
50
-
-
-
-
-
-
-
BSO065N03MS G
max.
110
150
100
100
6.5
2.3
35
50
80
10
2
8
-
-
Unit
K/W
V
µA
nA
m
S
2008-07-08

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