tpc6603 TOSHIBA Semiconductor CORPORATION, tpc6603 Datasheet - Page 3

• Manufacturer Part Number: tpc6603
• Description: Transistor Silicon Pnp Epitaxial Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

−0.001
−0.01
−0.1
−10
−0.001
−6
−5
−4
−3
−2
−1
−1
−5
−4
−3
−2
−1
0
0
0
0
Common emitter
I C /I B = 30
Single nonrepetitive pulse
Common emitter
V CE = −2 V
Single nonrepetitive pulse
Collector−emitter voltage V
−0.4
Base−emitter voltage V
−0.01
Collector current I
−0.4
Ta = 100°C
−100
−0.8
V
CE (sat)
I
I
C
C
Ta = 100°C
– V
– V
−1.2
−0.1
−0.8
−80
Common emitter
Ta = 25°C
Single nonrepetitive pulse
CE
BE
25
– I
25
C
−1.6
C
−55
−55
BE
−1.2
(A)
CE
−1
I B = −5 mA
(V)
−2.0
−60
(V)
−40
−20
−10
−2.4
−1.6
−10
3
10000
−0.01
1000
−100
−0.1
100
−10
−0.001
−0.001
10
−1
1
Common emitter
V CE = −2 V
Single nonrepetitive pulse
Common emitter
I C /I B = 30
Single nonrepetitive pulse
25
−0.01
−0.01
Collector current I
Collector current I
−55
25
V
BE (sat)
h
FE
−55
−0.1
−0.1
– I
Ta = 100°C
Ta = 100°C
– I
C
C
C
C
(A)
(A)
−1
−1
2006-11-13
TPC6603
−10
−10