tpca8a10-h TOSHIBA Semiconductor CORPORATION, tpca8a10-h Datasheet

tpca8a10-h

Manufacturer Part Number

tpca8a10-h

Description

Mosfets Silicon N-channel Mos U-mos-h/schottky Barrier Diode

Manufacturer

TOSHIBA Semiconductor CORPORATION

Datasheet

1.TPCA8A10-H.pdf (9 pages)

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MOSFETs Silicon N-Channel MOS (U-MOS-H/Schottky Barrier Diode)

TPCA8A10-H

1. 1. 1. 1. Applications

2. 2. 2. 2. Features

3. 3. 3. 3. Packaging and Internal Circuit

TPCA8A10-H

Applications

Features

Packaging and Internal Circuit

Applications

Features

Packaging and Internal Circuit

•

(1)

(2)

(3)

(4)

(5)

(6)

High-Efficiency DC-DC Converters

Notebook PCs

Mobile Handsets

Built-in a schottky barrier diode

Low forward voltage: V

High-speed switching

Small gate charge: Q

Low drain-source on-resistance: R

Low leakage current: I

Enhancement mode: V

SOP Advance

DSS

DSF

= 12 nC (typ.)

= 1.3 to 2.3 V (V

= 100 µA (max) (V

= -0.6 V (max)

DS(ON)

= 2.9 mΩ (typ.) (V

= 10 V, I

= 30 V)

= 0.5 mA)

= 4.5 V)

1, 2, 3: Source

4: Gate

5, 6, 7, 8: Drain

TPCA8A10-H

2011-06-19

Rev.1.0

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