tpca8a01-h TOSHIBA Semiconductor CORPORATION, tpca8a01-h Datasheet - Page 4

• Manufacturer Part Number: tpca8a01-h
• Description: ?oshiba Field Effect Transistor With Built-in Schottky Barrier Diode Silicon N-channel Mos Type Ultra-high-speed U-mos ?
• Manufacturer: TOSHIBA Semiconductor CORPORATION

1000
100
100
0.1
50
40
30
20
10
80
60
40
20
10
0
0
1
0.1
0
0
10
Common source
V DS = 10 V
Pulse test
8
6
5
Drain-source voltage V
Gate-source voltage V
1
0.2
Ta = −55°C
Drain current I
2
1
4.5
100
0.4
⎪Y
I
I
D
4
D
fs
3.8
3.6
– V
– V
⎪ − I
3
Ta = −55°C
DS
GS
25
0.6
D
D
3.4
25
100
10
4
GS
DS
(A)
Common source
V DS = 10 V
Pulse test
Common source
Ta = 25°C
Pulse test
0.8
V GS = 2.6 V
(V)
(V)
5
3.2
2.8
3
100
1
6
4
0.32
0.24
0.16
0.08
100
100
0.4
80
60
40
20
10
0
0
1
0.1
0
0
10
8
Common source
Ta = 25°C
Pulse test
Drain-source voltage V
Gate-source voltage V
6
2
4
1
5
4.5
Drain current I
1
3.8
R
V
DS (ON)
2
4
I
DS
D
– V
– V
DS
GS
− I
6
V GS = 10 V
3
D
D
4.5 V
3.6
10
GS
DS
(A)
Common source
Ta = 25°C
Pulse test
Common source
Ta = 25°C
Pulse test
TPCA8A01-H
V GS = 2.6 V
8
4
I D = 36 A
(V)
(V)
18
2007-04-10
9
3.4
3.2
2.8
3
100
10
5