tpca8012-h TOSHIBA Semiconductor CORPORATION, tpca8012-h Datasheet
tpca8012-h
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tpca8012-h Summary of contents
Page 1
... 208 4 150 °C ch −55 to 150 T °C stg 1 TPCA8012-H Unit: mm 0.4±0.1 1.27 0.5±0.1 0. 0.15±0. 0.595 5.0±0.2 A 0.95±0.05 0.166±0.05 0. 1.1±0 4.25±0 0.8±0.1 1,2,3:SOURCE 4:GATE 5,6,7,8:DRAIN JEDEC ― JEITA ― ...
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... Year of manufacture (The last digit of the calendar year) Symbol Max Unit R 2.78 °C/W th (ch-c) (Tc=25℃) R 44.6 °C/W th (ch-a) (Note 2a) R 78.1 °C/W th (ch-a) (Note 2b) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm Ω TPCA8012-H FR-4 25.4 × 25.4 × 0.8 (Unit: mm) ( 2007-12-26 ...
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... gs1 ∼ − (Ta = 25°C) Symbol Test Condition ⎯ I DRP = DSF TPCA8012-H Min Typ. Max = 0 V ⎯ ⎯ ±100 = 0 V ⎯ ⎯ 10 ⎯ ⎯ 30 ⎯ ⎯ 15 ⎯ 1.5 2.5 ⎯ 5.1 6.8 ⎯ 3.7 4.9 ⎯ ...
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... Drain−source voltage V 0.5 0.4 0.3 0.2 0 −55° (V) Gate−source voltage V 100 Common source Ta = 25°C Pulse test 10 1 100 0.1 4 TPCA8012-H I – 3.8 Common source Ta = 25°C Pulse test 3.6 3 – Common source Ta = 25° ...
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... Drain−source voltage V 3 2.5 C iss 2 1 oss Common source 0 10V 1mA C rss Pulse test 0 −80 −40 100 (V) Ambient temperature Ta (° TPCA8012-H I – 0.4 0.6 0.8 1.0 1.2 ( – 120 160 2007-12-26 ...
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... Curves must be derated linearly with increase in temperature. V DSS max 0.1 0 Drain−source voltage – 0.01 0 Pulse width t ( 160 0 100 (V) 6 TPCA8012-H (2) (1) (3) Single pulse 100 1000 P – 120 160 Case temperature Tc (°C) 2007-12-26 ...
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... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 TPCA8012-H 20070701-EN 2007-12-26 ...