si4308dy Vishay, si4308dy Datasheet - Page 4

• Manufacturer Part Number: si4308dy
• Description: Dual N-channel 30-v D-s Mosfet With Schottky Diode
• Manufacturer: Vishay

Si4308DY
Vishay Siliconix
www.vishay.com
4
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
-0.0
-0.2
-0.4
-0.6
-0.8
0.4
0.2
30
10
1
-50
0.0
0.01
0.1
2
1
10
-25
Source-Drain Diode Forward Voltage
- 4
0.2
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
V
SD
Single Pulse
0
T
- Source-to-Drain Voltage (V)
0.4
J
= 150_C
T
Threshold Voltage
25
J
- Temperature (_C)
10
- 3
0.6
50
I
D
75
Normalized Thermal Transient Impedance, Junction-to-Ambient
= 250 mA
0.8
100
T
J
10
= 25_C
1.0
- 2
125
150
1.2
Square Wave Pulse Duration (sec)
New Product
10
- 1
0.05
0.04
0.03
0.02
0.01
0.00
200
160
120
1
80
40
0
0.001
0
On-Resistance vs. Gate-to-Source Voltage
2
0.01
V
GS
10
Single Pulse Power
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
- Gate-to-Source Voltage (V)
JM
- T
Time (sec)
4
I
D
t
A
1
= 12.5 A
= P
t
0.1
2
DM
Z
S-21646—Rev. B, 23-Sep-02
thJA
6
thJA
100
Document Number: 71941
t
t
1
2
(t)
= 90_C/W
CHANNEL−1
1
8
600
10
10