ipb025n10n3g Infineon Technologies Corporation, ipb025n10n3g Datasheet
ipb025n10n3g
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ipb025n10n3g Summary of contents
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OptiMOS ® 3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) • Extremely low on-resistance R • High current capability • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to ...
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Parameter Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient Electrical characteristics Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Gate resistance Transconductance 3) ...
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Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Switching charge Gate charge total Gate plateau voltage Output ...
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Power dissipation P =f(T ) tot C 350 300 250 200 150 100 Safe operating area I =f =25 ° parameter limited ...
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Typ. output characteristics I =f =25 ° parameter 300 250 5.5 V 7.5 V 200 150 100 Typ. transfer characteristics I =f(V ); ...
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Drain-source on-state resistance R =f =100 A; V DS(on -60 - Typ. capacitances C =f MHz ...
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Avalanche characteristics =25 Ω parameter: T j(start) 1000 100 Drain-source breakdown voltage V =f BR(DSS 110 105 100 95 90 ...
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PG-TO263-3: Outline Rev. 2.1 page 8 IPB025N10N3 G 2008-10-20 ...
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Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to ...