sia425edj Vishay, sia425edj Datasheet - Page 4

• Manufacturer Part Number: sia425edj
• Description: P-channel 20-v D-s Mosfet
• Manufacturer: Vishay

SiA425EDJ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
100
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.1
10
- 50
1
0.0
- 25
Soure-Drain Diode Forward Voltage
0.2
V
SD
0
- Source-to-Drain Voltage (V)
Threshold Voltage
0.4
T
I
D
J
25
= 250 µA
- Temperature (°C)
T
J
0.6
50
= 150 °C
75
0.8
0.01
100
0.1
10
T
1
0.1
100
J
= 25 °C
Limited by R
Safe Operating Area, Junction-to-Ambient
* V
1.0
Single Pulse
125
T
GS
A
= 25 °C
> minimum V
V
150
DS
1.2
DS(on)
- Drain-to-Source Voltage (V)
1
*
BVDSS Limited
GS
at which R
10
DS(on)
0.15
0.12
0.09
0.06
0.03
0.00
20
16
12
8
4
0
0.001
is specified
100 µs
1 ms
100 ms
1 s, 10 s
10 ms
DC
0
On-Resistance vs. Gate-to-Source Voltage
I
D
Single Pulse Power, Junction-to-Ambient
= 2 A; T
I
D
0.01
= 4.2 A; T
100
1
V
J
GS
= 25 °C
- Gate-to-Source Voltage (V)
0.1
J
= 25 °C
2
Time (s)
S09-2268-Rev. A, 02-Nov-09
I
1
D
= 2 A; T
Document Number: 65575
I
D
3
= 4.2 A; T
10
J
= 125 °C
J
4
100
= 125 °C
1000
5