gfp70n03 ETC-unknow, gfp70n03 Datasheet - Page 2

• Manufacturer Part Number: gfp70n03
• Description: N-channel Enhancement-mode Mosfet
• Manufacturer: ETC-unknow

Electrical Characteristics
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Max Diode Forward Current
Diode Forward Voltage
Notes:
(1) Maximum DC current limited by the package
(2) Pulse test; pulse width
duty cycle
Test Circuit
Switching
V
GEN
2%
R
300 s,
(2)
G
(2)
V
(2)
IN
G
(2)
S
D
V
DD
N-Channel Enhancement-Mode MOSFET
R
(T
D
J
= 25°C unless otherwise noted)
Symbol
R
V
BV
I
t
t
DUT
I
I
C
DS(on)
C
V
GS(th)
D(on)
Q
Q
C
d(on)
d(off)
GSS
DSS
Q
g
I
t
t
oss
SD
DSS
rss
iss
S
fs
gs
gd
r
f
g
V
OUT
V
V
DS
V
V
V
V
V
V
V
I
DS
V
V
DS
D
I
GS
DS
DS
DS
DD
GS
S
GS
DS
=15V, V
Test Condition
= 35A, V
= V
= 0V, V
= 0V, I
= 15V, V
= 30V, V
= 15V, R
1A, V
= 4.5V, I
= 15V, I
f = 1.0MH
= 10V, I
V
Waveforms
V
R
I
Switching
5V, V
DS
D
GS
GS
G
= 35A
—
, I
GS
= 6
= 15V
GEN
= 0V
D
GS
D
GS
GS
=5V, I
D
D
Output, V
= 250 A
GS
D
GS
L
= 250 A
= ±20V
= 35A
= 35A
= 10V
Input, V
= 15
Z
= 10V
= 30A
= 0V
= 10V
= 0V
D
=35A
t
d(on)
OUT
IN
10%
Min
1.0
30
70
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
t
on
50%
10%
t
PULSE WIDTH
r
90%
3400
Typ
100
618
300
GFP70N03
0.9
61
34
63
11
11
31
—
—
—
—
—
—
6
9
9
9
t
d(off)
±100
Max
167
3.0
1.3
50%
48
95
14
14
62
35
—
—
11
—
—
—
—
—
—
1
8
90%
t
off
10%
90 %
t
INVERTED
Unit
f
m
nC
nA
pF
ns
V
V
A
S
A
V
A