tpcp8402 TOSHIBA Semiconductor CORPORATION, tpcp8402 Datasheet - Page 5

• Manufacturer Part Number: tpcp8402
• Description: Toshiba Field Effect Transistor Silicon P, N Channel Mos Type U-mos Iv / U-mos Iii
• Manufacturer: TOSHIBA Semiconductor CORPORATION

P-ch
100
-4
-2
-8
-6
10
0
1
-5
-4
-3
-2
-1
-0.1
0
0
0
Common source
V DS = -10 V
Pulse test
Common source
V DS = -10 V
Pulse test
Drain−source voltage V
Gate−source voltage V
-4.5
-6
-0.2
-1
-0.3
-10
Drain current I
100
-0.4
-2
⎪Y
I
I
D
D
fs
– V
-3.5
– V
⎪ – I
-1
Ta = −55°C
DS
GS
-3.0
25
-0.6
-3
D
D
25
GS
DS
(A)
Ta = −55°C
Common source
Ta = 25°C
Pulse test
-3
-0.8
-4
V GS = -2.3
(V)
(V)
100
-2.8
-2.6
-2.7
-2.5
-1.0
-10
-5
5
1000
-2.0
-1.6
-0.4
-10
-1.2
-0.8
100
-8
-6
-4
-2
10
0
0
0.1
0
0
-10
Common source
Ta = 25°C
Pulse test
Drain−source voltage V
-0.8
Gate−source voltage V
-2
-1
-3.5
-6
Drain current I
-4.5
-3.0
R
-4
-2
V
DS (ON)
I
DS
D
-1.6
– V
V GS = -4.5 V
– V
-1
DS
GS
– I
-6
-3
-10
D
D
Common source
Ta= 25℃
Pulse test
GS
DS
(A)
Common source
Ta = 25°C
Pulse test
I D = -3.2A
-2.8
V GS = -2.3 V
-2.7
-8
-4
(V)
(V)
TPCP8402
-2.6
-2.5
2006-11-13
-5
-10
-10