ta7371afg TOSHIBA Semiconductor CORPORATION, ta7371afg Datasheet - Page 3

• Manufacturer Part Number: ta7371afg
• Description: Fm Front?end
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Absolute Maximum Ratings
Electrical Characteristics
(unless otherwise specified, V
Terminal Voltage
Terminal Voltage at no Signal
Supply voltage
Power dissipation
Operating temperature
Storage temperature
(Note)
Supply current
Input limiting sensitivity
Quiescent sensitivity
Conversion gain
Local oscillator voltage
Local oscillator stop
voltage
AFC diode capacity
Pin(1) input impedance
Pin(6) input impedance
Pin(8) input impedance
Terminal No.
1
2
3
4
5
6
7
8
Characteristic
Derated above Ta = 25°C in the proportion of 2mW / °C.
Characteristic
RF INPUT
GND
AFC DIODE (cathode)
AFC DIODE (anode)
LOCAL OSC
MIXER OUTPUT
V
RF OUTPUT
CC
Terminal Name
CC
V
Symbol
C
V
R
C
R
C
in
V
R
C
I
Q
G
AFC
(V
CC
stop
op
op
op
op
osc
(Ta = 25°C)
= 1.5V, Ta = 25°C, f = 83MHz, ∆f = ±22.5kHz, f
(lim)
ip
ip
C
S
1
1
Symbol
2
2
3
3
P
CC
V
T
T
D
CC
opr
stg
(Note)
= 1.5V, Ta = 25°C)
Test
Cir−
cuit
2
2
2
2
1
1
6
3
4
5
−55~150
−25~75
Rating
V
−3dB limiting point
S / N = 30dB
V
f = 60MHz
f = 60MHz
f = 70MHz, V
f = 83MHz
f = 10.7MHz
f = 83MHz
240
in
if
5
3
= 20mV
= 0
Terminal Voltage
Test Condition
Typ. (V)
rms
0.7
1.5
1.5
1.5
1.5
AFC
―
―
0
Unit
mW
°C
°C
V
= 3V
Min.
―
―
―
―
75
―
―
―
―
―
―
―
―
Typ.
0.85
110
300
100
1.8
5.0
8.7
3.8
2.2
4.8
10
12
25
m
= 1kHz)
TA7371AFG
Max.
0.95
150
2.6
16
―
―
―
―
―
―
―
―
―
2006-04-28
dBµV EMF
dBµV EMF
mV
Unit
mA
dB
kΩ
kΩ
pF
pF
pF
pF
Ω
V
rms