gs82032at-180 GSI Technology, gs82032at-180 Datasheet - Page 9

• Manufacturer Part Number: gs82032at-180
• Description: 64k X 32 2m Synchronous Burst Sram
• Manufacturer: GSI Technology

Absolute Maximum Ratings
(All voltages reference to V
Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be
restricted to Recommended Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings,
for an extended period of time, may affect reliability of this component.
Recommended Operating Conditions
Notes:
1.
2.
3.
4.
Rev: 1.09 7/2002
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Supply Voltage
I/O Supply Voltage
Input High Voltage
Input Low Voltage
Ambient Temperature (Commercial Range Versions)
Ambient Temperature (Industrial Range Versions)
Unless otherwise noted, all performance specifications quoted are evaluated for worst case at both 2.75 V V
and 3.6 V V
This device features input buffers compatible with both 3.3 V and 2.5 V I/O drivers.
Most speed grades and configurations of this device are offered in both Commercial and Industrial Temperature ranges. The part number of
Industrial Temperature Range versions end with the character “I”. Unless otherwise noted, all performance specifications quoted are evalu-
ated for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be –2 V > Vi < V
Symbol
V
T
T
V
I
V
V
V
OUT
P
BIAS
DDQ
I
STG
DD
CK
I/O
IN
IN
D
DDQ
Voltage on V
Voltage in V
Voltage on Clock Input Pin
Voltage on I/O Pins
Voltage on Other Input Pins
Input Current on Any Pin
Output Current on Any I/O Pin
Package Power Dissipation
Storage Temperature
Temperature Under Bias
Parameter
3.135 V (i.e., 3.3 V I/O) and quoted at whichever condition is worst case.
Description
DDQ
SS
DD
)
Pins
Pins
Symbol
DD
V
–0.5 to V
V
+2 V with a pulse width not to exceed 20% tKC.
–0.5 to V
V
V
DDQ
T
T
DD
IH
9/23
IL
A
A
DDQ
DD
–0.5 to V
–0.5 to 4.6
–55 to 125
–55 to 125
–0.5 to 6
+0.5 ( 4.6 V max.)
Value
+0.5 ( 4.6 V max.)
+/–20
+/–20
3.135
2.375
Min.
–0.3
1.5
–40
1.7
0
DD
Typ.
3.3
2.5
25
25
—
—
GS82032AT/Q-180/166/133/100
Unit
mA
mA
o
o
W
V
V
V
V
V
C
C
V
Max.
DD
V
3.6
0.8
70
85
DD
+0.3
© 2000, Giga Semiconductor, Inc.
DDQ
Unit
V
V
V
V
C
C
2.375 V (i.e., 2.5 V I/O)
Notes
1
2
2
3
3