mt9vddf6472y-335 Micron Semiconductor Products, mt9vddf6472y-335 Datasheet - Page 15

• Manufacturer Part Number: mt9vddf6472y-335
• Description: 256mb, 512mb X72, Ecc, Sr 184-pin Ddr Sdram Rdimm
• Manufacturer: Micron Semiconductor Products

Table 12: IDD Specifications and Conditions – 256MB
DDR SDRAM components only
Notes: 1–5, 8, 10, 12, 48; notes appear on pages 20–23; 0°C
pdf: 09005aef80e119b2, source: 09005aef807d56a1
DDF9C32_64x72G.fm - Rev. B 9/04 EN
PARAMETER/CONDITION
OPERATING CURRENT: One device bank; Active-Precharge;
t
once per clock cyle; Address and control inputs changing once
every two clock cycles
OPERATING CURRENT: One device bank; Active -Read Precharge;
Burst = 4;
and control inputs changing once per clock cycle
PRECHARGE POWER-DOWN STANDBY CURRENT: All device
banks idle; Power-down mode;
IDLE STANDBY CURRENT: CS# = HIGH; All device banks idle;
t
once per clock cycle. V
ACTIVE POWER-DOWN STANDBY CURRENT: One device bank
active; Power-down mode;
CKE = LOW
ACTIVE STANDBY CURRENT: CS# = HIGH; CKE = HIGH; One device
bank; Active-Precharge;
DM andDQS inputs changing twice per clock cycle; Address and
other control inputs changing once per clock cycle
OPERATING CURRENT: Burst = 2; Reads; Continuous burst; One
bank active; Address and control inputs changing once per clock
cycle;
I
OPERATING CURRENT: Burst = 2; Writes; Continuous burst; One
device bank active; Address and control inputs changing once
per clock cycle;
changing twice per clock cycle
AUTO REFRESH CURRENT
SELF REFRESH CURRENT: CKE
OPERATING CURRENT: Four device bank interleaving READs (BL =
4) with auto precharge,
t
Active READ, or WRITE commands
OUT
RC (MIN);
CK MIN; CKE = HIGH; Address and other control inputs changing
CK =
= 0mA
t
t
CK (MIN); Address and control inputs change only during
CK =
t
t
RC =
CK =
t
CK (MIN);
t
t
CK =
RC (MIN);
t
CK (MIN); DQ, DM and DQS inputs changing
t
CK (MIN); DQ, DM, and DQS inputs
IN
t
t
= V
RC =
RC =
t
CK =
t
REF
CK =
t
t
RC (MIN);
RAS (MAX);
0.2V
for DQ, DQS, and DM
t
CK =
t
CK (MIN); I
t
CK (MIN);
t
CK (MIN); CKE = (LOW)
t
t
t
CK =
REFC =
REFC = 7.8125µs
OUT
= 0mA; Address
t
CK (MIN); DQ,
t
RFC (MIN)
t
RC =
t
CK =
15
T
A
+70°C; V
I
SYM
I
I
I
I
I
I
DD4W
I
I
DD3N
I
DD5A
I
I
DD2P
DD2F
DD3P
DD4R
DD 0
DD1
DD5
DD6
DD7
256MB, 512MB (x72, ECC, SR)
Micron Technology, Inc., reserves the right to change products or specifications without notice.
184-PIN DDR SDRAM RDIMM
DD
= V
1,125
1,530
1,575
1,575
2,295
3,690
-335
450
270
540
36
54
36
DD
Q = +2.5V ±0.2V
1,125
1,440
1,350
1,350
2,115
3,150
MAX
-262
405
225
450
36
54
36
©2004 Micron Technology, Inc. All rights reserved.
-26A/
1,080
1,305
1,350
1,350
2,115
3,150
-265/
-202
405
225
450
36
54
36
UNITS NOTES
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
21, 28,
21, 28,
20, 42
20, 42
20, 42
20, 44
24, 44
20, 43
44
45
44
41
20
9