m470t2953by3-ld5/cc Samsung Semiconductor, Inc., m470t2953by3-ld5/cc Datasheet - Page 13

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m470t2953by3-ld5/cc

Manufacturer Part Number
m470t2953by3-ld5/cc
Description
200pin Unbuffered Sodimm Based On 512mb B-die 64bit Non-ecc
Manufacturer
Samsung Semiconductor, Inc.
Datasheet
Electrical Characteristics & AC Timing for DDR2-533/400 SDRAM
Refresh Parameters by Device Density
Speed Bins and CL, tRCD, tRP, tRC and tRAS for Corresponding Bin
256MB, 512MB, 1GB Unbuffered SODIMMs
Refresh to active/Refresh command time
Average periodic refresh interval
Bin (CL - tRCD - tRP)
Parameter
tCK, CL=3
tCK, CL=4
tCK, CL=5
tRCD
tRP
tRC
tRAS
(0 qC < T
Parameter
Speed
CASE
< 95 qC; V
DDQ
= 1.8V + 0.1V; V
tRFC
tREFI
3.75
min
15
15
55
40
5
-
DDR2-533(D5)
DD
85qCT
4 - 4 - 4
0qCdT
= 1.8V + 0.1V)
Symbol
CASE
CASE
70000
max
d 85qC
8
8
-
d 95qC
256Mb
7.8
3.9
75
min
15
15
55
40
5
5
-
512Mb
DDR2-400(CC)
105
7.8
3.9
3 - 3 - 3
127.5
1Gb
7.8
3.9
Rev. 1.5 Aug. 2005
70000
max
8
8
-
DDR2 SDRAM
2Gb
195
7.8
3.9
4Gb
tbd
7.8
3.9
Units
ns
ns
ns
ns
ns
ns
ns
Units
ns
Ps
Ps

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