mt8vddt6464hg-40b Micron Semiconductor Products, mt8vddt6464hg-40b Datasheet - Page 16

• Manufacturer Part Number: mt8vddt6464hg-40b
• Description: 256mb, 512mb X64, Sr Pc3200 200-pin Ddr Sodimm
• Manufacturer: Micron Semiconductor Products

Table 15: DDR SDRAM Component Electrical Characteristics and Recommended AC
Notes: 1–5, 12-15, 29; notes appear on pages 17–19; 0°C
pdf: 09005aef80b577e4, source: 09005aef80921669
DDA8C32_64x64HG.fm - Rev. D 9/04 EN
AC CHARACTERISTICS
PARAMETER
ACTIVE to READ or WRITE delay
PRECHARGE command period
DQS read preamble
DQS read postamble
ACTIVE bank a to ACTIVE bank b command
DQS write preamble
DQS write preamble setup time
DQS write postamble
Write recovery time
Internal WRITE to READ command delay
Data valid output window
REFRESH to REFRESH command interval
Average periodic refresh interval
Terminating voltage delay to V
Exit SELF REFRESH to non-READ command
Exit SELF REFRESH to READ command
Operating Conditions (Continued)
DD
T
A
16
+70°C; V
256MB, 512MB (x64, SR) PC3200
SYMBOL
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD
t
t
WPRES
t
t
t
t
t
t
t
WPRE
t
t
WPST
t
t
XSNR
XSRD
RPRE
REFC
RPST
t
WTR
RCD
RRD
REFI
VTD
t
WR
na
RP
= V
DD
Q = +2.6V ±0.1V
200-PIN DDR SODIMM
MIN
0.25
200
0.9
0.4
0.4
15
15
10
15
70
0
2
t
0
QH -
-40B
t
DQSQ
MAX
70.3
1.1
0.6
0.6
7.8
UNITS
t
t
t
t
t
t
ns
ns
CK
CK
ns
CK
ns
CK
ns
CK
ns
µs
µs
ns
ns
CK
©2004 Micron Technology, Inc.
NOTES
18, 19
38
38
17
22
21
21