r1wv3216r Renesas Electronics Corporation., r1wv3216r Datasheet
r1wv3216r
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r1wv3216r Summary of contents
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... R1W V3216R Series 32Mb superSRAM (2M wordx16bit) The R1WV3216R Series is a family of low voltage 32-Mbit static RAMs organized as 2097152-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies. The R1WV3216R Series is suitable for memory applications where a simple interfacing , battery operating and battery backup are the important design objectives. ...
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... R1W V3216R Series Type No. Access time R1WV3216RSD-7S% R1WV3216RSD-8S% R1WV3216RBG-7S% R1WV3216RBG-8S Temperature version; see table below % Rev.1.00 2004.4.13 page Ordering Information 70 ns 350-mil 52-pin plastic µ - TSOP(II) (normal-bend type) (52PTG 7.5mmx8.5mm f-BGA 0.75mm pitch 48ball 85 ns Temperature Range 0 ~ +70 º ...
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R1W V3216R Series 52-pin µTSOP 1 A15 2 A14 A13 3 4 A12 A11 5 A10 A19 10 CS1# WE Vcc 14 CS2 A20 17 A18 ...
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R1W V3216R Series A0 A20 CS2 CS1# LB# UB# BYTE# WE# OE# Note: BYTE# pin supported by only TSOP type. Rev.1.00 2004.4.13 page Block Diagram Memory Array 1048576 Words x 16BITS OR 2097152 Words x 8BITS CLOCK ...
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R1W V3216R Series CS1# CS2 BYTE# LB ...
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R1W V3216R Series Recommended Operating Conditions Parameter Supply voltage Input high voltage Input low voltage R ver. Ambient temperature range W ver. I ver. Note 1. –2.0V in case of AC (Pulse width temperature range depends on R/W/I-version. Please see ...
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R1W V3216R Series Parameter Symbol Input capacitance C in Input / output capacitance C Note 1. This parameter is sampled and not 100% tested. Test Conditions (Vcc=2.7~3.6V 0~+70ºC / -20~+85ºC / -40~+85ºC *) Input pulse levels: VIL= 0.4V,VIH=2.4V ...
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... Output enable to output valid Output hold from address change LB#,UB# access time Chip select to output in low-Z LB#,UB# enable to low-Z Output enable to output in low-Z Chip deselect to output in high-Z LB#,UB# disable to high-Z Output disable to output in high-Z Rev.1.00 2004.4.13 page R1WV3216R**-7S R1WV3216R**-8S Symbol Min. Max ...
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... OHZ WHZ t max is less than measured from the beginning of write to the end of write. WP R1WV3216R**-8S Unit Notes Min. Max ...
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... R1W V3216R Series Byte enable ( supported by only Parameter Byte setup time Byte recovery time BYTE# Timing Waveform CS2 CS1# BYTE# Rev.1.00 2004.4.13 page 52-pin µTSOP ) R1WV3216R**-7S Symbol Min. Max R1WV3216R**-8S Unit Notes Min. Max ...
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R1W V3216R Series Read Cycle A 0~20 (Word Mode) A -1~20 (Byte Mode) LB#,UB# CS1# CS2 OE# WE# = "H" level DQ 0~15 (Word Mode) DQ 0~7 (Byte Mode) Rev.1.00 2004.4.13 page Timing Waveform t RC Valid ...
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R1W V3216R Series Write Cycle (1) (WE# Clock) A 0~20 (Word Mode) A -1~20 (Byte Mode) LB#,UB# CS1# CS2 WE# DQ 0~15 (Word Mode) DQ 0~7 (Byte Mode) Rev.1.00 2004.4.13 page Valid address t BW ...
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R1W V3216R Series Write Cycle (2) (CS1# ,CS2 Clock, OE#=V A 0~20 (Word Mode) A -1~20 (Byte Mode) LB#,UB# CS1# CS2 WE# DQ 0~15 (Word Mode) DQ 0~7 (Byte Mode) Rev.1.00 2004.4.13 page ...
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R1W V3216R Series Write Cycle (3) ( LB#,UB#Clock, OE#=V A 0~20 (Word Mode) A -1~20 (Byte Mode) LB#,UB# CS1# CS2 WE# DQ 0~15 (Word Mode) DQ 0~7 (Byte Mode) Rev.1.00 2004.4.13 page Valid ...
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R1W V3216R Series Parameter Vcc for data retention Data retention current Chip deselect to data retention time Operation recovery time Icc Note 1.Typical parameter of indicates the value for the center of distribution at Vcc=3.0V and not 100% tested. DR ...
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R1W V3216R Series Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there ...