hb28c048c6 Renesas Electronics Corporation., hb28c048c6 Datasheet - Page 52

• Manufacturer Part Number: hb28c048c6
• Description: Compactflash? 48 Mbyte/32 Mbyte/16 Mbyte
• Manufacturer: Renesas Electronics Corporation.

HB28C048/032/016C6
DC Characteristics-1 (Ta = 0 to +60˚C, V
Parameter
Input leakage current
Output voltage
Note:
Parameter
Input voltage
(CMOS)
Input voltage
(Schmitt trigger)
DC Characteristics-2 (Ta = 0 to +60˚C, V
Parameter
Sleep/standby
current
Sector read
current
Sector write
current
52
1. Except pulled up input pin.
Symbol Min
V
V
V
V
Symbol
I
I
I
I
I
IL
IH
IL
IH
SP1
CCR
CCR
CCW
CCW
(DC)
(Peak) 50
(DC)
(Peak) 50
Symbol
I
V
V
LI
3.3 V
—
2.4
—
—
OL
OH
3.3 V
Typ
0.3
25
25
Min
—
—
V
Typ
—
—
1.0
1.8
Max
0.5
50
80
50
80
CC
– 0.8 —
5 V
Typ
0.5
40
80
45
80
Max
0.6
—
—
—
Typ
—
—
Max
1.0
75
120
75
120
CC
CC
= 5 V ± 10%, 3.3 V ± 5%)
= 5 V ± 10%, 3.3 V ± 5%)
5 V
Min
—
4.0
—
—
Max
± 1
0.4
—
Unit
mA
mA
mA
Test conditions
CMOS level (control signal = V
(In Memory card mode and I/O card mode)
CMOS level (control signal = V
during sector read transfer
CMOS level (control signal = V
during sector write transfer
Typ
—
—
2.0
2.8
Unit
µA
V
V
Test conditions
Vin = GND to V
I
I
OL
OH
Max
0.8
—
—
—
= 8 mA
= –8 mA
Unit Test conditions
V
V
V
V
CC
CC
CC
CC
– 0.2 V)
– 0.2 V)
– 0.2 V)
Note
1