k4h510438b-tuc/lb3 Samsung Semiconductor, Inc., k4h510438b-tuc/lb3 Datasheet - Page 15

• Manufacturer Part Number: k4h510438b-tuc/lb3
• Description: 512mb C-die Ddr Sdram Specification
• Manufacturer: Samsung Semiconductor, Inc.

18.0 Overshoot/Undershoot specification for Data, Strobe and Mask Pins
DDR SDRAM 512Mb B-die (x4, x8, x16)
Maximum peak amplitude allowed for overshoot
Maximum peak amplitude allowed for undershoot
The area between the overshoot signal and VDD must be less than or equal to
The area between the undershoot signal and GND must be less than or equal to
DQ/DM/DQS AC overshoot/Undershoot Definition
-1
-2
-3
-4
-5
5
4
3
2
1
0
Parameter
Maximum Amplitude = 1.2V
0 0.5 1.0 1.42 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 5.68 6.0 6.5 7.0
Area = 2.4V-ns
VDDQ
Overshoot
Tims(ns)
Maximum Amplitude = 1.2V
undershoot
GND
DDR400
TBD
TBD
TBD
TBD
Rev. 1.3 June. 2005
Specification
DDR333
TBD
TBD
TBD
TBD
DDR SDRAM
DDR200/266
2.4 V-ns
2.4 V-ns
1.2 V
1.2 V