k4d261638e Samsung Semiconductor, Inc., k4d261638e Datasheet - Page 10

• Manufacturer Part Number: k4d261638e
• Description: 2m X 16bit X 4 Banks Double Data Rate Synchronous Dram
• Manufacturer: Samsung Semiconductor, Inc.

Note :
ABSOLUTE MAXIMUM RATINGS
POWER & DC OPERATING CONDITIONS(SSTL_2 In/Out)
Recommended operating conditions(Voltage referenced to V
Note :
Voltage on any pin relative to Vss
Voltage on V
Voltage on V
Storage temperature
Power dissipation
Short circuit current
K4D261638E
Device Supply voltage
Output Supply voltage
Reference voltage
Termination voltage
Input logic high voltage
Input logic low voltage
Output logic high voltage
Output logic low voltage
Input leakage current
Output leakage current
1. Under all conditions V
2. V
3. V
4. V
5. V
6. For any pin under test input of 0V < V
7. For the K4D261638E-TC2A, VDD & VDDQ = 2.8V+0.1V
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
peak noise on the V
and an additional + 25mV for AC noise.
Parameter
REF
tt
IH
IL
of the transmitting device must track V
(max.)= V
(mim.)= -1.5V for a pulse width and it can not be greater than 1/3 of the cycle rate.
DD
DD
is expected to equal 0.50*V
Parameter
supply relative to Vss
supply relative to Vss
DDQ
+1.5V for a pulse width and it can not be greater than 1/3 of the cycle rate.
REF
DDQ
may not exceed + 2% of the DC value. Thus, from 0.50*V
must be less than or equal to V
Symbol
V
V
V
V
V
IH(DC)
V
IL(DC)
V
I
Vtt
DDQ
REF
I
OL
DD
OH
OL
IL
DDQ
IN
of the transmitting device and to track variations in the DC level of the same. Peak to
< V
REF
0.49*V
V
V
DD
Vtt+0.76
REF
REF
2.375
2.375
-0.30
of the receiving device.
V
Min
is acceptable. For all other pins that are not under test V
Symbol
-5
-5
IN
+0.15
-
V
-0.04
T
V
, V
I
P
DDQ
DDQ
STG
OS
DD
D
SS
OUT
=0V, T
- 10 -
DD
A
.
=0 to 65qC)
V
Typ
2.50
2.50
REF
-
-
-
-
-
-
-
V
0.51*V
V
V
DDQ
REF
Vtt-0.76
REF
2.625
2.625
Max
-55 ~ +150
5
5
-0.5 ~ 3.6
-1.0 ~ 3.6
-0.5 ~ 3.6
-
+0.04
+0.30
-0.15
DDQ
Value
DDQ
2.0
50
, V
REF
128M DDR SDRAM
is allowed + 25mV for DC error
Unit
uA
uA
V
V
V
V
V
V
V
V
Rev. 1.2 (Jul. 2003)
IN
=0V.
I
I
OL
OH
=+15.2mA
Unit
=-15.2mA
mA
Note
qC
W
V
V
V
1,7
1,7
2
3
4
5
6
6