k4t56163qi Samsung Semiconductor, Inc., k4t56163qi Datasheet - Page 16

• Manufacturer Part Number: k4t56163qi
• Description: 256mb I-die Ddr2 Sdram
• Manufacturer: Samsung Semiconductor, Inc.

12.0 Input/Output capacitance
13.0 Electrical Characteristics & AC Timing for DDR2-800/667/533/400
13.1 Refresh Parameters by Device Density
13.2 Speed Bins and CL, tRCD, tRP, tRC and tRAS for Corresponding Bin
K4T56163QI
Input capacitance, CK and CK
Input capacitance delta, CK and CK
Input capacitance, all other input-only pins
Input capacitance delta, all other input-only pins
Input/output capacitance, DQ, DM, DQS, DQS
Input/output capacitance delta, DQ, DM, DQS, DQS
Refresh to active/Refresh command time
Average periodic refresh interval
Bin (CL - tRCD - tRP)
(0 °C < T
Parameter
tCK, CL=3
tCK, CL=4
tCK, CL=5
tCK, CL=6
Speed
tRCD
tRAS
tRP
tRC
OPER
Parameter
< 95 °C; V
Parameter
3.75
12.5
12.5
57.5
DDR2-800(E7)
min
2.5
45
5
-
DDQ
5-5-5
= 1.8V + 0.1V; V
70000
max
8
8
8
-
-
-
-
tRFC
tREFI
3.75
DDR2-800(F7)
min
2.5
15
15
60
45
3
-
0 °C ≤ T
85 °C < T
6-6-6
DD
= 1.8V + 0.1V)
Symbol
70000
max
Symbol
CDCK
CDIO
8
8
8
CCK
-
-
-
-
CDI
CIO
CASE
16 of 42
CI
CASE
≤ 85°C
≤ 95°C
3.75
DDR2-667(E6)
min
15
15
60
45
5
3
-
5 - 5 - 5
Min
1.0
1.0
2.5
x
x
x
DDR2-400
DDR2-533
70000
max
8
8
8
256Mb
-
-
-
-
7.8
3.9
Max
0.25
0.25
75
2.0
2.0
4.0
0.5
DDR2-533(D5)
3.75
3.75
min
15
15
60
45
5
-
512Mb
105
4 - 4 - 4
7.8
3.9
Min
1.0
1.0
2.5
x
x
x
DDR2-667
70000
max
8
8
8
-
-
-
-
127.5
1Gb
Max
0.25
0.25
7.8
3.9
2.0
2.0
3.5
0.5
Rev. 1.0 October 2007
DDR2-400(CC)
min
15
15
55
40
5
5
DDR2 SDRAM
-
-
2Gb
3 - 3 - 3
Min
195
1.0
1.0
2.5
7.8
3.9
x
x
x
DDR2-800
70000
max
8
8
-
-
-
-
-
327.5
Max
0.25
1.75
0.25
4Gb
2.0
3.5
0.5
7.8
3.9
Units
Units
ns
ns
ns
ns
ns
ns
ns
ns
Units
pF
pF
pF
pF
pF
pF
ns
µs
µs