s71ns128ja0 Advanced Micro Devices, s71ns128ja0 Datasheet - Page 16

• Manufacturer Part Number: s71ns128ja0
• Description: Stacked Multi-chip Product Mcp , 128 Megabit 8 M X 16-bit And 64 Megabit 4 M X 16-bit , 110 Nm Cmos 1.8 Volt-only Simultaneous Read/write, Burst Mode Flash Memories With 16 Megabit 1 M X 16-bit Psram
• Manufacturer: Advanced Micro Devices

pSRAM CHARACTERISTICS
Legend: L= Logic0, H= Logic1, X= Don’t care
16
Symbol
CS#
H
I
I
I
L
L
L
L
L
L
L
L
L
L
L
V
V
I
I
CC1
CC2
SB1
LO
OH
LI
OL
pSRAM Device Bus Operations
pSRAM DC Characteristics
OE#
Average Operating Current
H
H
H
H
H
H
X
X
L
L
L
L
Standby Current (CMOS)
Output Leakage Current
Input Leakage Current
Output High Voltage
Output Low Voltage
WE#
H
H
H
H
H
H
X
X
L
L
L
L
Item
LB#
H
H
H
H
H
H
X
X
L
L
L
L
UB#
H
H
H
H
H
H
X
X
L
L
L
L
Cycle Time = 1 µs, 100% duty, I
Cycle Time = Min, I
CS#
CS# = V
CS#
AVD#
≤
H
H
H
H
H
H
H
H
H
X
X
L
≥
0.2 V, V
CS# = V
V
S71NS128JA0/S71NS064JA0
CC
IH
–0.2V, Other Inputs = 0~V
Test Conditions
or OE# = V
V
V
A[19-16]
I
IO
IN
I
IN
OH
Addr In
OL
IL
= V
= V
≤
P r e l i m i n a r y
, V
= -0.1 mA
X
X
X
X
X
X
X
X
X
X
X
= 0.1 mA
0.2V or V
IO
SS
SS
IN
= 0 mA, 100% duty,
= V
to V
to V
IH
or WE# = V
IH
CC
CC
A/DQ[15-0]
IN
or V
Data Out
Data Out
Data Out
Data Out
HIGH-Z
HIGH-Z
HIGH-Z
Data In
Addr In
Data In
Data In
Data In
≥
IO
V
IL
= 0 mA,
CC
–0.2V
IL
CC
,
Lower Byte Write
Upper Byte Write
Lower Byte Read
Upper Byte Read
V
Output Disabled
Output Disabled
Register Write
Register Read
Address Input
CC
Configuration
Configuration
Word Write
Deselected
Word Read
Min
–0.1 V
-1
-1
Access
Access
Mode
Typ
31136A1 February 5, 2004
Max
Standby
0.1
20
70
Power
Active
Active
Active
Active
Active
Active
Active
Active
Active
Active
Active
1
1
5
Unit
mA
mA
µA
µA
µA
V
V