m36l0r8060b0 STMicroelectronics, m36l0r8060b0 Datasheet - Page 8
m36l0r8060b0
Manufacturer Part Number
m36l0r8060b0
Description
256 Mbit Multiple Bank, Multi-level, Burst Flash Memory 64 Mbit Burst Psram, 1.8v Supply, Multi-chip Package
Manufacturer
STMicroelectronics
Datasheet
1.M36L0R8060B0.pdf
(18 pages)
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FUNCTIONAL DESCRIPTION
The PSRAM and Flash memory components have
separate power supplies but share the same
grounds. They are distinguished by two Chip En-
able inputs: E
the PSRAM.
Recommended operating conditions do not allow
more than one device to be active at a time. The
Figure 4. Functional Block Diagram
8/18
A0-A21
F
for the Flash memory and E
L
K
A22-A23
WP
RP
E
G
W
CR
UB
LB
E
W
G
P
P
F
P
F
F
P
F
P
F
P
V
V
P
CCP
DDF
for
256 Mbit
Memory
PSRAM
64 Mbit
Flash
V
PPF
most common example is simultaneous read oper-
ations on one of the Flash and the PSRAM which
would result in a data bus contention. Therefore it
is recommended to put the other devices in the
high impedance state when reading the selected
device.
V
SS
V
DDQ
WAIT
DQ0-DQ15
AI09314