a3l90tdxxi AEGIS SEMICONDUTORES LTDA, a3l90tdxxi Datasheet - Page 2

• Manufacturer Part Number: a3l90tdxxi
• Description: Thyristors
• Manufacturer: AEGIS SEMICONDUTORES LTDA

Fig. 1 - Current Ratings Characteristics
120
110
100
90
80
70
60
*Sinusoidal Waveform
0
V
V
r
I
I
t
t
dv/dt Critical rate-of-rise of
off-state voltage
I
state current
I
V
trigger
V
trigger
R
junction-to-case
R
case-to-sink
wt Weight
Case Style
CHARACTERISTICS
L
H
d
q
RM
GT
T
TM
T(TO)
GT
GD
thJC
thCS
Latching current
Delay time
Turn-off time
Slope resistance
Holding current
10 20 30 40 50 60 70 80 90 100 110 120 130 140
, I
DC gate current to trigger
peak on-state voltage
DC gate voltage to
DC gate voltage not to
DM
Thermal resistance,
Thermal resistance,
SEMICONDUTORES LTDA.
Threshold voltage
Maximum Allowable Case Temperature
PARAMETER
Peak reverse and off-
Average Forward Current (A)
30º
60º
MIN.
80
50
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4
2
90º
TO-240AA
110(4)
TYP.
125
140
0.7
10
80
120º
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A3L:90TD.XXI
0.145
0.155
0.162
MAX. UNITS
180º
1.63
0.89
2.42
0.25
400
200
200
500
300
150
1.5
2.5
0.1
25
20
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JEDEC
g(oz.)
O
O
O
O
V/ms
mW
C/W
C/W
C/W
C/W
mA
mA
mA
mA
ms
ms
V
V
V
V
Initial T
T
Av. power = V
Use low values for I
T
T
T
20W, 10ms, 1ms rise time.
T
V/ms lin. to rated V
T
To 80% V
T
T
T
T
T
T
T
anode.
DC operation, single side cooled.
180 sine wave, single side cooled.
120 rectangular wave, single side cooled.
Mtg. Surface smooth, flat and greased. Single side cooled.
J
C
C
C
J
J
J
J
C
C
C
C
C
= 125 C
= 125 C, I
= 125 C. Exp. to 100% or lin.
= 125 C, Exp. To 67% V
= 125 C, Rated V
Fig. 2 - Current Ratings Characteristics
= 125 C, 12V anode. Gate pulse: 10V, 20 W, 100ms.
= 25 C, 12V anode. Initial I
= 25 C, V
= -40 C
= 25 C
= -40 C
= 25 C
= 25 C, Max. Value which will not trigger with rated V
120
110
100
90
80
70
60
*Rectangular Waveform
J
O
O
O
O
O
O
O
O
O
= 25 C, 50-60Hz half sine, I
O
O
O
O
0
DRM
D
TM
O
, gate open.
gate drive see "Gate Characteristics" figure.
T(TO)
= V
+12V anode-to-cathode. For recommended
= 500A, di/dt = 25A/ms, V
25
DRM
DRM
* I
TEST CONDITIONS
TM
RRM
Maximum Allowable Case Temperature
T(AV)
, 50A resistive load. Gate pulse: 10V,
. Gate: 0V, 100 W.
< p rated I
and V
Average Forward Current (A)
+r
50
DRM
T
30º
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* [I
---
T
DRM
, gate open.
= 15A.
T(RMS)
T(AV)
Higher dv/dt values
avaliable.
, gate open.
75
peak
60º
]
2
, 180 Half Sine.
= 282A.
R
= 50V. dv/dt = 20
90º
100
120º
125
DRM
180º
150
DC