lb11600jv Sanyo Semiconductor Corporation, lb11600jv Datasheet

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lb11600jv

Manufacturer Part Number
lb11600jv
Description
Brushless Motor Predriver Ic For Automotive Applications
Manufacturer
Sanyo Semiconductor Corporation
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
lb11600jv-MPB-E
Manufacturer:
SANYO/三洋
Quantity:
20 000
Ordering number : EN8321A
LB11600JV
Overview
Functions
Applications
Specifications
Absolute Maximum Ratings at Ta = 25°C
Supply voltage
Output Circuit current
Allowable power dissipation
Operating temperature
Storage temperature
The LB11600JV is a direct PWM drive predriver IC appropriate for 3-phase power brushless motors in automotive
applications. This IC can implement either high side PWM drive or low side PWM drive motor driver circuits depending
on the configuration of the output circuits, which use discrete transistors such as MOSFETs or bipolar transistors. In
addition to a full complement of protection functions, including overcurrent, thermal, motor constraint, and undervoltage
protection, the LB11600JV also provides an integrated speed control function. Thus the LB11600JV can implement high
reliability/high functionality drive circuits.
• Three-phase bipolar drive (UH, VH, and WH pins, PWM control)
• Forward/reverse switching circuit
• Overcurrent protection circuit
• Undervoltage protection circuit
• Motor constraint protection circuit
• Thermal protection circuit
• Speed control circuit
Parameter
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before using any SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
V CC max
Symbol
Pd max
I O max
Topr
Tstg
Monolithic Digital IC
Brushless Motor Predriver IC for
Automotive Applications
V CC Pin
UL, VL, WL, UH, VH, and WH pins
Independent IC
D2706 MS IM 20060831-S00005 / 92706 / D0205 MH OT B8-8935 No.8321-1/30
Conditions
Rated value
-40 to 100
-55 to 150
14.5
0.5
40
Unit
mA
°C
°C
W
V

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lb11600jv Summary of contents

Page 1

... LB11600JV Overview The LB11600JV is a direct PWM drive predriver IC appropriate for 3-phase power brushless motors in automotive applications. This IC can implement either high side PWM drive or low side PWM drive motor driver circuits depending on the configuration of the output circuits, which use discrete transistors such as MOSFETs or bipolar transistors. In addition to a full complement of protection functions, including overcurrent, thermal, motor constraint, and undervoltage protection, the LB11600JV also provides an integrated speed control function ...

Page 2

... V OL (PWM) External capacitor charge 1CHG current Oscillator frequency F (PWM) Amplitude Vp-p (PWM) HP Pin Output saturation voltage VHPL Output leakage current IHPleak LB11600JV Symbol Conditions Pin UL, VL, WL, UH, VH, and WH pins VRF VHP IHP Conditions S Stop mode, S Low level 400µA ...

Page 3

... Input open voltage V IO (FR) Hysteresis V IS (FR) High-level input current I IH (FR) Low-level input current I IL (FR) *: These are design target value and are not tested. LB11600JV Conditions -0.5mA -VCSD CSET = 4.9V CSET = 4. CSET pin CSET pin RFGND = 0V Design target value (junction temperature)* Design target value (junction temperature)* CEG = 4 ...

Page 4

... GND IN1+ LB11600JV Conditions PWMIN = 5V PWMIN = 0V PWMRE = 0V 0.15 S PWMIN PWMRE CSET LB11600JV IN1- IN2+ IN2- IN3+ IN3- Rated value Min. Typ. Max. 2 0.2 0.3 0.4 - -130 -96 50 -260 -200 -140 1.12 1 ...

Page 5

... Block Diagram and Application Circuit 1 : MOS transistor drive (low side PWM), speed control feedback application LB11600JV No.8321-5/30 ...

Page 6

... Application Circuit 2: Bipolar transistor (high side PWM) LB11600JV No.8321-6/30 ...

Page 7

... When F/R is high, the IC recognizes the states where the Hall inputs in the above table occur in the order 6 → forward rotation, and the reverse order as reverse rotation. • S/S Pin Input state Operating state High or open Stop state L Start state If the S/S pin is not used, the input must be held at the low-level voltage. LB11600JV F/R=[H] IN2 IN3 IN1 IN2 ...

Page 8

... IN3 input. 13 CEG Rotation pulse edge detection input. (This input is used by the one-shot multivibrator circuit.) Insert a capacitor between this pin and LB11600JV Function IN+ 300Ω Equivalent circuit UH, VH, WH ...

Page 9

... If unused: leave open. 16 CTL+ CTL+: Control voltage input 17 CTL- (Integrating amplifier noninverting input) CTL-: Control voltage input (Integrating amplifier inverting input) 18 TOC PWM waveform comparator (Integrating amplifier output) LB11600JV Function CTL+ 300Ω PWM pin Equivalent circuit ...

Page 10

... PWMIN External PWM input. When the input is low, the out put will be in the drive state and when the input is high or open, the output will be off. LB11600JV Function CSET Equivalent circuit PWM 200Ω ...

Page 11

... RFGND RFGND: Output current detection circuit 28 RF comparator reference ground. RF: Output current detection. Insert a resistor with a low resistance between the RF pin and ground. The maximum output current is set to I OUT = 0.24/RF by the resistor RF. LB11600JV Function RFGND 6kΩ 27 Equivalent circuit S/S 3.5kΩ ...

Page 12

... Timing Charts (Hall input/output, startup, input off state, and constraint protection timing charts) F/R = “L” IN1 IN2 IN3 F/R = “H” IN1 IN2 IN3 The gray areas indicate PWM output. LB11600JV Forward Forward No.8321-12/30 ...

Page 13

... Startup Timing Chart (When a buffered input is provided to CTL PWM The PWM and TOC duty signal PWMIN PWMRE Trset CSD UH (When the output is on.) LB11600JV Output on 5V TOC 0.7V 0V 4.9V PWMRE VthH=1.25V PWMRE(OFF)VthL=0.5V Hysteresis = 0.7V 4.9V 3.8V or higher - Rapid charging off. 4.2V No.8321-13/30 ...

Page 14

... Startup Timing Chart (When the PWMIN input is used PWM The PWM and TOC duty signal PWMIN PWMRE CSD UH (When the output is on.) LB11600JV Trset Output on 5V TOC 0.7V 5V 4.9V PWMRE VthH=1.25V PWMRE(OFF)VthL=0.5V Hysteresis = 0.7V 4.9V 3.8V or higher - Rapid charging off. 4.2V No.8321-14/30 ...

Page 15

... Input Off State (CTL+input) Reset Operation Timing Chart V CC PWM The PWM and TOC duty signal PWMIN PWMRE CSD UH (When the output is on.) LB11600JV Toff Output off 5V TOC 0.7V 0V 4.9V PWMRE VthH = 1.25V PWMRE (OFF) VthL = 0.5V Hysteresis = 0.7V 4.9V Constraint protection Vth = 0.6V 4.2V No.8321-15/30 ...

Page 16

... Input Off State (PWMIN input) Reset Operation Timing Chart V CC PWM The PWM and TOC duty signal PWMIN PWMRE CSD UH (When the output is on.) LB11600JV 5V PWMRE VthH = 1.25V PWMRE (OFF) VthL = 0.5V Toff Constraint protection Vth = 0.6V Output off TOC 0.7V 0V 4.9V Hysteresis = 0.7V 4.9V 4.2V No.8321-16/30 ...

Page 17

... Constraint Protection State Latch Release Timing Chart (CLT+ input PWM The PWM and TOC duty signal PWMIN PWMRE CSD 4.2V UH (When the output is on.) LB11600JV Tchg Toff Latch released Torc Constraint protection operation (output off) 5V TOC 0.7V 0V 4.9V PWMRE VthH = 1.25V PWMRE (OFF) VthL = 0.5V Hysteresis = 0 ...

Page 18

... Constraint Protection Timing Chart LB11600JV No.8321-18/30 ...

Page 19

... LB11600JV Application Circuit Diagram (FET driver: low side PWM control) 0.055 (2W) 0.033µF *: The resistor, capacitor, and transistor values shown are for reference purposes only. The values used in an application will depend on the motor used and the control specifications. LB11600JV 1kΩ ...

Page 20

... Power Saving Circuit The LB11600JV goes to a power saving state in which power consumption is reduced when the S/S pin is set to the high level. The power saving state cuts off the bias current from most of the circuits in the IC. 3. ...

Page 21

... × e-t2/RC = ∆V When off: Ipwmre: PWMRE pin charge current: 200µA (typical) V0: PWMRE initial potential PWMRE pin external capacitor R: PWMRE pin external resistor t1: PWMIN input duty on time t2: PWMIN input duty off time LB11600JV To the PWMIN pin Pulse input No.8321-21/30 ...

Page 22

... Thus the reset time Trest will be one PWMIN period plus t1'. Trest = 40µs + 6.622µs = 46.622µs (s) LB11600JV No.8321-22/30 ...

Page 23

... PWMRE Timing Chart for PWMIN Pin Input PWM PWMIN PWMRE V1 V0 CSD UH (When the output is on.) LB11600JV ∆V Trset Output on TOC 5V 4.9V PWMRE VthH=1.25V PWMRE(OFF)VthL=0.5V Hysteresis = 0.7V V 4.9V 3.8V or higher - Rapid charging off. 4.2V No.8321-23/30 ...

Page 24

... The times t1 and t2 for the rise potential (V1) and fall potential (V2) due to each on duty ratio will differ. Thus these must be calculated individually for each input pulse signal. The formulas for calculating V1 and V2 are the same as for the PWMIN input case. LB11600JV No.8321-24/30 ...

Page 25

... CTL+ input mode (When the TOC potential is high due to the rise of the PWM triangle wave) PWM t1 The PWM and TOC duty signal PWMIN Tpwmra PWMRE V1 V0 Trset CSD UH (When the output is on.) LB11600JV t2 V2 Output on TOC 0.7V 0V 4.9V PWMRE VthH=1.25V PWMRE(OFF)VthL=0.5V Hysteresis = 0.7V 4.9V 3.8V or higher - Rapid charging off. 4.2V ...

Page 26

... PWMRE Timing Chart for CTL+ Buffered Input (2) CTL+ input mode (When the TOC potential rises after the rise of the PWM triangle wave) PWM The PWM and TOC duty signal PWMIN PWMRE V0 CSD UH (When the output is on.) LB11600JV ...

Page 27

... Constraint Protection Circuit The LB11600JV includes a constraint protection circuit to protect the motor and the IC itself when the motor is physically prevented from turning. If the Hall input signals do not change for a certain fixed period when the IC is operating in the motor drive state, one side of the output system (the UH, VH, and WH outputs) is turned off. The time is set by the discharge time of the resistor and capacitor connected to the CSD pin ...

Page 28

... The Hall signal created from the IN3 pin Hall amplifier input signal is inverted and output from the HP pin. Since the HP pin is an open-collector output, a pull-up resistor must be inserted between V CC and the HP pin. Hall amplifier input conditions: IN3-: fixed potential, HP pin: pulled IN3+ input HP pin LB11600JV To the RF pin Current detection resistor IN3- No ...

Page 29

... CEG pin circuit block with the timing of the fall (high to low) of the UH output signal, one of the three output phases. The LB11600JV detects the rotation period from this signal. The rotation pulse detection signal time is set by the discharge time of the capacitor connected to the CEG pin. ...

Page 30

... SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of December, 2006. Specifications and information herein are subject to change without notice. LB11600JV PS No.8321-30/30 ...

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